SiH4-doped AlGaAs epilayers formed by MOCVD

H. M. Shieh; T. S. Wu; W. C. Hsu

doi:10.1016/0022-0248(92)90573-2

SiH₄-doped AlGaAs epilayers formed by MOCVD

H. M. Shieh, T. S. Wu, W. C. Hsu

研究成果: Article › 同行評審

6 引文斯高帕斯（Scopus）

摘要

Silane-doped AlGaAs epilayers have been grown by metalorganic chemical vapor deposition (MOCVD). The poor efficiency of SiH₄ doped in Al_xGa_1-xAs rich in Al(x > 0.2) is discussed in detail. The electron carrier concentration has been raised about 39 times for Al_0.38Ga_0.62As by increasing the V/III ratio and the growth temperature, and using the δ-doping method. The influence of δ-doping on the electron carrier concentration and the growth rate was studied and new models and interpretation are proposed.

原文	English
頁（從 - 到）	665-670
頁數	6
期刊	Journal of Crystal Growth
卷	121
發行號	4
DOIs	https://doi.org/10.1016/0022-0248(92)90573-2
出版狀態	Published - 1992 8月 1

All Science Journal Classification (ASJC) codes

凝聚態物理學
無機化學
材料化學

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10.1016/0022-0248(92)90573-2

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AU - Shieh, H. M.

AU - Wu, T. S.

AU - Hsu, W. C.

PY - 1992/8/1

Y1 - 1992/8/1

N2 - Silane-doped AlGaAs epilayers have been grown by metalorganic chemical vapor deposition (MOCVD). The poor efficiency of SiH4 doped in AlxGa1-xAs rich in Al(x > 0.2) is discussed in detail. The electron carrier concentration has been raised about 39 times for Al0.38Ga0.62As by increasing the V/III ratio and the growth temperature, and using the δ-doping method. The influence of δ-doping on the electron carrier concentration and the growth rate was studied and new models and interpretation are proposed.

AB - Silane-doped AlGaAs epilayers have been grown by metalorganic chemical vapor deposition (MOCVD). The poor efficiency of SiH4 doped in AlxGa1-xAs rich in Al(x > 0.2) is discussed in detail. The electron carrier concentration has been raised about 39 times for Al0.38Ga0.62As by increasing the V/III ratio and the growth temperature, and using the δ-doping method. The influence of δ-doping on the electron carrier concentration and the growth rate was studied and new models and interpretation are proposed.

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JO - Journal of Crystal Growth

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SiH4-doped AlGaAs epilayers formed by MOCVD

摘要

All Science Journal Classification (ASJC) codes

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SiH₄-doped AlGaAs epilayers formed by MOCVD