Silated acidic copolymers for nanoimprint lithography on flexible plastic substrates

Wen chang Liao, Steve Lien Chung Hsu, Jui Chen Lin

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

A new silated acidic polymer was developed as the resist for nanoimprint lithography on flexible substrates. This polymer was synthesized from methylmethacrylate, n-butylacrylate, methacrylic acid and 3-[tris(trimethylsiloxy)silyl]propyl methacrylate by free radical copolymerization with an azobisisobutyronitrile (AIBN) initiator at 90 °C. The resist has excellent reactive ion etching (RIE) resistability, a lower Tg (43 °C) compared to poly(methyl methacrylate) (PMMA) and good flowability. It is suitable to use on flexible plastic substrates. The resist can be easily removed by an aqueous base solution at the final stripping step, instead of using an organic solvent or RIE. A 100 nm/50 nm (line/space) feature pattern was obtained on a flexible polyethylene terephthalate (PET)/ITO substrate.

原文English
頁(從 - 到)129-135
頁數7
期刊Microelectronic Engineering
84
發行號1
DOIs
出版狀態Published - 2007 一月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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