TY - JOUR
T1 - Silicon germanium FinFET device physics, process integration and modeling considerations (invited)
AU - Lu, Darsen
AU - Morin, Pierre
AU - Sahu, Bhagawan
AU - Hook, Terence B.
AU - Hashemi, Pouya
AU - Scholze, Andreas
AU - Kim, Bomsoo
AU - Kerber, Pranita
AU - Khakifirooz, Ali
AU - Oldiges, Phil
AU - Rim, Ken
AU - Doris, Bruce
PY - 2014
Y1 - 2014
N2 - We introduce SiGe FinFET device physics, process integration, and modeling considerations. Germanium is know to have a higher hole mobility than silicon. Enhancement of hole velocity due to lattice mismatch strain in SiGe epitaxy layers is significant. In addition, uniaxial stress is beneficial for device performance. Transformation of biaxial to uniaxial stress naturally occurs when SiGe film is etched into stripes. Furthermore, control of MOSFET threshold voltage by adjusting the SiGe-channel germanium content is possible. On the other hand, SiGe processing challenges include the elimination of interface trap states at the gate dielectric interface, fast diffusion of n-type dopants, and defects in stress relaxed buffer and critical thickness limitations. Band-to-band tunneling sets a lower bound to device static leakage current.
AB - We introduce SiGe FinFET device physics, process integration, and modeling considerations. Germanium is know to have a higher hole mobility than silicon. Enhancement of hole velocity due to lattice mismatch strain in SiGe epitaxy layers is significant. In addition, uniaxial stress is beneficial for device performance. Transformation of biaxial to uniaxial stress naturally occurs when SiGe film is etched into stripes. Furthermore, control of MOSFET threshold voltage by adjusting the SiGe-channel germanium content is possible. On the other hand, SiGe processing challenges include the elimination of interface trap states at the gate dielectric interface, fast diffusion of n-type dopants, and defects in stress relaxed buffer and critical thickness limitations. Band-to-band tunneling sets a lower bound to device static leakage current.
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U2 - 10.1149/06406.0337ecst
DO - 10.1149/06406.0337ecst
M3 - Conference article
AN - SCOPUS:84921306797
SN - 1938-5862
VL - 64
SP - 337
EP - 345
JO - ECS Transactions
JF - ECS Transactions
IS - 6
T2 - 6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting
Y2 - 5 October 2014 through 9 October 2014
ER -