Silicon light emissions from boron implant-induced extended defects

G. Z. Pan, R. P. Ostroumov, L. P. Ren, Y. G. Lian, K. L. Wang

研究成果: Conference article同行評審


We studied the electroluminescence (EL) of boron-implanted p-n junction Si LEDs in correlation with the implant-induced extended defects of different types. By varying the post implant annealing conditions to tune the extended defects and by using plan-view transmission electron microscopy to identify them, we found that {113} defects along Sil 〈10〉 are the ones that result in strong silicon light emission of the p-n junction Si LEDs other than {111} perfect prismatic and {111} faulted Frank dislocation loops. The EL peak intensity at about 1.1 eV of {113} defect-engineered Si LEDs is about twenty-five times higher than that of dislocation defect-engineered Si LEDs. The EL measured at temperatures from room temperature to 4 K indicated that the emissions related to the extended defects are from silicon band edge radiative recombination.

頁(從 - 到)247-252
期刊Materials Research Society Symposium Proceedings
出版狀態Published - 2005
事件2005 materials Research Society Spring Meeting - San Francisco, CA, United States
持續時間: 2005 3月 282005 4月 1

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)
  • 凝聚態物理學
  • 材料力學
  • 機械工業


深入研究「Silicon light emissions from boron implant-induced extended defects」主題。共同形成了獨特的指紋。