Strength characterization and supporting analysis of mesoscale biaxial flexure and radiused hub flexure single crystal silicon specimens were conducted. The Weibull reference strength of planar biaxial flexure specimens was found to lie in the range 1.2 to 4.6 GPa. The local strength at stress concentrations was obtained by testing radiused hub flexure specimens. For the case of deep reactive ion etched (DRIE) specimens, the strength at fillet radii was significantly lower than that measured from planar biaxial flexure specimens due to the inferior surface quality in such regions. Further, it was found that strength could be significantly increased by the introduction of an additional isotropic etch after the DRIE step.
|頁（從 - 到）||123-130|
|期刊||Materials Research Society Symposium - Proceedings|
|出版狀態||Published - 1998|
|事件||Proceedings of the 1998 MRS Spring Symposium - San Francisco, CA, USA|
持續時間: 1998 4月 15 → 1998 4月 16
All Science Journal Classification (ASJC) codes