Simulation of focusing field emission devices

Y. C. Lan; J. T. Lai; S. H. Chen; W. C. Wang; C. H. Tsai; K. L. Tsai; C. Y. Sheu

doi:10.1116/1.591296

Simulation of focusing field emission devices

Y. C. Lan, J. T. Lai, S. H. Chen, W. C. Wang, C. H. Tsai, K. L. Tsai, C. Y. Sheu

光電科學與工程學系

研究成果: Article › 同行評審

12 引文斯高帕斯（Scopus）

摘要

The different focusing structures are simulated by the MAGIC particle-on-cell code cell program. The normal devices without focusing structures are also studied for comparison. The narrow or wide gate width means that the simulated outer gate width does not extend or extends to the simulation boundary. The voltages applied on the cathode electrode, the gate electrode, and the focus electrode are 0, 80, and 0 V, respectively. An anode plate with 4 kV is placed 1 mm away from and parallel to the cathode plate.

原文	English
頁（從 - 到）	911-913
頁數	3
期刊	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
卷	18
發行號	2
DOIs	https://doi.org/10.1116/1.591296
出版狀態	Published - 2000 3月

All Science Journal Classification (ASJC) codes

凝聚態物理學
電氣與電子工程

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10.1116/1.591296

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@article{615853b22e8f4a328043dbebc0d68f65,

title = "Simulation of focusing field emission devices",

abstract = "The different focusing structures are simulated by the MAGIC particle-on-cell code cell program. The normal devices without focusing structures are also studied for comparison. The narrow or wide gate width means that the simulated outer gate width does not extend or extends to the simulation boundary. The voltages applied on the cathode electrode, the gate electrode, and the focus electrode are 0, 80, and 0 V, respectively. An anode plate with 4 kV is placed 1 mm away from and parallel to the cathode plate.",

author = "Lan, {Y. C.} and Lai, {J. T.} and Chen, {S. H.} and Wang, {W. C.} and Tsai, {C. H.} and Tsai, {K. L.} and Sheu, {C. Y.}",

year = "2000",

month = mar,

doi = "10.1116/1.591296",

language = "English",

volume = "18",

pages = "911--913",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "2",

}

TY - JOUR

T1 - Simulation of focusing field emission devices

AU - Lan, Y. C.

AU - Lai, J. T.

AU - Chen, S. H.

AU - Wang, W. C.

AU - Tsai, C. H.

AU - Tsai, K. L.

AU - Sheu, C. Y.

PY - 2000/3

Y1 - 2000/3

N2 - The different focusing structures are simulated by the MAGIC particle-on-cell code cell program. The normal devices without focusing structures are also studied for comparison. The narrow or wide gate width means that the simulated outer gate width does not extend or extends to the simulation boundary. The voltages applied on the cathode electrode, the gate electrode, and the focus electrode are 0, 80, and 0 V, respectively. An anode plate with 4 kV is placed 1 mm away from and parallel to the cathode plate.

AB - The different focusing structures are simulated by the MAGIC particle-on-cell code cell program. The normal devices without focusing structures are also studied for comparison. The narrow or wide gate width means that the simulated outer gate width does not extend or extends to the simulation boundary. The voltages applied on the cathode electrode, the gate electrode, and the focus electrode are 0, 80, and 0 V, respectively. An anode plate with 4 kV is placed 1 mm away from and parallel to the cathode plate.

UR - http://www.scopus.com/inward/record.url?scp=0034155841&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034155841&partnerID=8YFLogxK

U2 - 10.1116/1.591296

DO - 10.1116/1.591296

M3 - Article

AN - SCOPUS:0034155841

SN - 1071-1023

VL - 18

SP - 911

EP - 913

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 2

ER -

Simulation of focusing field emission devices

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