TY - GEN
T1 - Simulations of photo- carrier decay on heterojunction with intrinsic thin layer (HIT) solar cells with n-type wafers
AU - Kanevce, A.
AU - Li, J. V.
AU - Crandall, R. S.
AU - Page, M. R.
AU - Iwaniczko, E.
PY - 2010
Y1 - 2010
N2 - This work presents simulations of photo-excited minority carriers decay in HIT cells. The photo-carrier decay is analyzed as a function of light pulse duration, c-Si material quality and external parameters such as voltage bias and temperature. The simulation results can help interpret capacitance transient as well as photovoltage decay measurements.
AB - This work presents simulations of photo-excited minority carriers decay in HIT cells. The photo-carrier decay is analyzed as a function of light pulse duration, c-Si material quality and external parameters such as voltage bias and temperature. The simulation results can help interpret capacitance transient as well as photovoltage decay measurements.
UR - http://www.scopus.com/inward/record.url?scp=78449308815&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=78449308815&partnerID=8YFLogxK
U2 - 10.1109/NUSOD.2010.5595659
DO - 10.1109/NUSOD.2010.5595659
M3 - Conference contribution
AN - SCOPUS:78449308815
SN - 9781424470174
T3 - 10th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2010
SP - 73
EP - 74
BT - 10th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2010
T2 - 10th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2010
Y2 - 6 September 2010 through 9 September 2010
ER -