Simulations of photo- carrier decay on heterojunction with intrinsic thin layer (HIT) solar cells with n-type wafers

A. Kanevce, J. V. Li, R. S. Crandall, M. R. Page, E. Iwaniczko

研究成果: Conference contribution

1 引文 斯高帕斯(Scopus)

摘要

This work presents simulations of photo-excited minority carriers decay in HIT cells. The photo-carrier decay is analyzed as a function of light pulse duration, c-Si material quality and external parameters such as voltage bias and temperature. The simulation results can help interpret capacitance transient as well as photovoltage decay measurements.

原文English
主出版物標題10th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2010
頁面73-74
頁數2
DOIs
出版狀態Published - 2010 十一月 24
事件10th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2010 - Atlanta, GA, United States
持續時間: 2010 九月 62010 九月 9

出版系列

名字10th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2010

Other

Other10th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2010
國家United States
城市Atlanta, GA
期間10-09-0610-09-09

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Modelling and Simulation

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  • 引用此

    Kanevce, A., Li, J. V., Crandall, R. S., Page, M. R., & Iwaniczko, E. (2010). Simulations of photo- carrier decay on heterojunction with intrinsic thin layer (HIT) solar cells with n-type wafers. 於 10th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2010 (頁 73-74). [5595659] (10th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2010). https://doi.org/10.1109/NUSOD.2010.5595659