TY - JOUR
T1 - Single-crystalline chromium silicide nanowires and their physical properties
AU - Hsu, Han Fu
AU - Tsai, Ping Chen
AU - Lu, Kuo Chang
N1 - Funding Information:
KCL acknowledges the support from the National Science Council through grants 100-2628-E-006-025-MY2 and 102-2221-E-006-077-MY3.
Publisher Copyright:
© 2015, Hsu et al.; licensee Springer.
PY - 2015
Y1 - 2015
N2 - In this work, chromium disilicide nanowires were synthesized by chemical vapor deposition (CVD) processes on Si (100) substrates with hydrous chromium chloride (CrCl3 · 6H2O) as precursors. Processing parameters, including the temperature of Si (100) substrates and precursors, the gas flow rate, the heating time, and the different flow gas of reactions were varied and studied; additionally, the physical properties of the chromium disilicide nanowires were measured. It was found that single-crystal CrSi2 nanowires with a unique morphology were grown at 700°C, while single-crystal Cr5Si3 nanowires were grown at 750°C in reducing gas atmosphere. The crystal structure and growth direction were identified, and the growth mechanism was proposed as well. This study with magnetism, photoluminescence, and field emission measurements demonstrates that CrSi2 nanowires are attractive choices for future applications in magnetic storage, photovoltaic, and field emitters.
AB - In this work, chromium disilicide nanowires were synthesized by chemical vapor deposition (CVD) processes on Si (100) substrates with hydrous chromium chloride (CrCl3 · 6H2O) as precursors. Processing parameters, including the temperature of Si (100) substrates and precursors, the gas flow rate, the heating time, and the different flow gas of reactions were varied and studied; additionally, the physical properties of the chromium disilicide nanowires were measured. It was found that single-crystal CrSi2 nanowires with a unique morphology were grown at 700°C, while single-crystal Cr5Si3 nanowires were grown at 750°C in reducing gas atmosphere. The crystal structure and growth direction were identified, and the growth mechanism was proposed as well. This study with magnetism, photoluminescence, and field emission measurements demonstrates that CrSi2 nanowires are attractive choices for future applications in magnetic storage, photovoltaic, and field emitters.
UR - http://www.scopus.com/inward/record.url?scp=84924309948&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84924309948&partnerID=8YFLogxK
U2 - 10.1186/s11671-015-0776-8
DO - 10.1186/s11671-015-0776-8
M3 - Article
AN - SCOPUS:84924309948
SN - 1931-7573
VL - 10
JO - Nanoscale Research Letters
JF - Nanoscale Research Letters
IS - 1
M1 - 50
ER -
