Single crystalline GaN epitaxial layer prepared on nano-patterned Si(001) substrate

C. C. Huang, S. J. Chang, C. H. Kuo, C. H. Wu, C. H. Ko, Clement H. Wann, Y. C. Cheng, W. J. Lin

研究成果: Article

5 引文 斯高帕斯(Scopus)

摘要

The authors report the growth of GaN epitaxial layers on nano-patterned Si(001) substrates prepared by the standard facilities used in integrated circuit (IC) industry. It was found that we could achieve high-quality single crystalline GaN by using the 50 nm SiO2 recess patterned Si(001) substrate. It was also found that we can reduce the tensile stress in GaN epitaxial layer by about 95 using the nano-patterned Si(001) substrate, as compared to the conventional un-patterned Si(111) substrate.

原文English
頁(從 - 到)H626-H629
期刊Journal of the Electrochemical Society
158
發行號6
DOIs
出版狀態Published - 2011

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

指紋 深入研究「Single crystalline GaN epitaxial layer prepared on nano-patterned Si(001) substrate」主題。共同形成了獨特的指紋。

  • 引用此

    Huang, C. C., Chang, S. J., Kuo, C. H., Wu, C. H., Ko, C. H., Wann, C. H., Cheng, Y. C., & Lin, W. J. (2011). Single crystalline GaN epitaxial layer prepared on nano-patterned Si(001) substrate. Journal of the Electrochemical Society, 158(6), H626-H629. https://doi.org/10.1149/1.3569753