Single crystalline GaN epitaxial layer prepared on nano-patterned Si(001) substrate

C. C. Huang; S. J. Chang; C. H. Kuo; C. H. Wu; C. H. Ko; Clement H. Wann; Y. C. Cheng; W. J. Lin

doi:10.1149/1.3569753

Single crystalline GaN epitaxial layer prepared on nano-patterned Si(001) substrate

C. C. Huang, S. J. Chang, C. H. Kuo, C. H. Wu, C. H. Ko, Clement H. Wann, Y. C. Cheng, W. J. Lin

微電子工程研究所

研究成果: Article › 同行評審

6 引文斯高帕斯（Scopus）

摘要

The authors report the growth of GaN epitaxial layers on nano-patterned Si(001) substrates prepared by the standard facilities used in integrated circuit (IC) industry. It was found that we could achieve high-quality single crystalline GaN by using the 50 nm SiO₂ recess patterned Si(001) substrate. It was also found that we can reduce the tensile stress in GaN epitaxial layer by about 95 using the nano-patterned Si(001) substrate, as compared to the conventional un-patterned Si(111) substrate.

原文	English
頁（從 - 到）	H626-H629
期刊	Journal of the Electrochemical Society
卷	158
發行號	6
DOIs	https://doi.org/10.1149/1.3569753
出版狀態	Published - 2011

All Science Journal Classification (ASJC) codes

電子、光磁材料
可再生能源、永續發展與環境
表面、塗料和薄膜
電化學
材料化學

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abstract = "The authors report the growth of GaN epitaxial layers on nano-patterned Si(001) substrates prepared by the standard facilities used in integrated circuit (IC) industry. It was found that we could achieve high-quality single crystalline GaN by using the 50 nm SiO2 recess patterned Si(001) substrate. It was also found that we can reduce the tensile stress in GaN epitaxial layer by about 95 using the nano-patterned Si(001) substrate, as compared to the conventional un-patterned Si(111) substrate.",

author = "Huang, {C. C.} and Chang, {S. J.} and Kuo, {C. H.} and Wu, {C. H.} and Ko, {C. H.} and Wann, {Clement H.} and Cheng, {Y. C.} and Lin, {W. J.}",

year = "2011",

doi = "10.1149/1.3569753",

language = "English",

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T1 - Single crystalline GaN epitaxial layer prepared on nano-patterned Si(001) substrate

AU - Huang, C. C.

AU - Chang, S. J.

AU - Kuo, C. H.

AU - Wu, C. H.

AU - Ko, C. H.

AU - Wann, Clement H.

AU - Cheng, Y. C.

AU - Lin, W. J.

PY - 2011

Y1 - 2011

N2 - The authors report the growth of GaN epitaxial layers on nano-patterned Si(001) substrates prepared by the standard facilities used in integrated circuit (IC) industry. It was found that we could achieve high-quality single crystalline GaN by using the 50 nm SiO2 recess patterned Si(001) substrate. It was also found that we can reduce the tensile stress in GaN epitaxial layer by about 95 using the nano-patterned Si(001) substrate, as compared to the conventional un-patterned Si(111) substrate.

AB - The authors report the growth of GaN epitaxial layers on nano-patterned Si(001) substrates prepared by the standard facilities used in integrated circuit (IC) industry. It was found that we could achieve high-quality single crystalline GaN by using the 50 nm SiO2 recess patterned Si(001) substrate. It was also found that we can reduce the tensile stress in GaN epitaxial layer by about 95 using the nano-patterned Si(001) substrate, as compared to the conventional un-patterned Si(111) substrate.

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DO - 10.1149/1.3569753

M3 - Article

AN - SCOPUS:79955544010

SN - 0013-4651

VL - 158

SP - H626-H629

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 6

ER -

Single crystalline GaN epitaxial layer prepared on nano-patterned Si(001) substrate

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