Single crystalline iron silicide and beta-iron disilicide nanowires formed through chemical vapor deposition

Wei Jie Huang, Yu Yang Chen, Hsiu Ming Hsu, Kuo Chang Lu

研究成果: Article

1 引文 斯高帕斯(Scopus)

摘要

In this paper, we report the synthesis of iron silicide and β-iron disilicide nanowires with chemical vapor deposition; remarkably, the latter has drawn much attention but has seldom been achieved. We also propose the formation mechanisms for the two phases. To investigate the effects of the growth parameters on compositions and morphologies of the iron silicide nanowires, we changed and studied the reaction time, substrate temperature, position of samples, and pressure. The reaction concentration was found to be altered by all of the parameters; thus, we observed different nanowires in terms of morphologies and compositions with scanning electron microscopy. To confirm the growth direction and crystal structure of the nanowires, we conducted x-ray diffraction and high-resolution transmission electron microscopy studies. With the potential of being utilized as circuit elements in electronic devices for Schottky barriers, ohmic contacts, and interconnection among silicon-based transistors, the silicide work at nanoscale is beneficial for nanoelectronics. Understanding the effects of these growth parameters facilitates the control of nanowire growth with better quality.

原文English
文章編號2384
期刊Materials
11
發行號12
DOIs
出版狀態Published - 2018 十一月 27

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

指紋 深入研究「Single crystalline iron silicide and beta-iron disilicide nanowires formed through chemical vapor deposition」主題。共同形成了獨特的指紋。

  • 引用此