Single-domain Si (110) -16×2 surface fabricated by electromigration

Yoichi Yamada; Antoine Girard; Hidehito Asaoka; Hiroyuki Yamamoto; Shin Ichi Shamoto

doi:10.1103/PhysRevB.76.153309

Single-domain Si (110) -16×2 surface fabricated by electromigration

Yoichi Yamada
, Antoine Girard
, Hidehito Asaoka
, Hiroyuki Yamamoto
, Shin Ichi Shamoto

物理學系

研究成果: Article › 同行評審

30 引文斯高帕斯（Scopus）

摘要

Micrometer-wide single domain of Si (110) -16×2 reconstruction has been fabricated by means of controlled electromigration of surface atoms. The electromigration effect in dc heating process is found to line up the reconstruction rows when the current direction matches the orientation of the rows. This finding provides not only a well-controlled surface preparation method for Si(110) but also another template for low-dimensional nanostructures.

原文	English
文章編號	153309
期刊	Physical Review B - Condensed Matter and Materials Physics
卷	76
發行號	15
DOIs	https://doi.org/10.1103/PhysRevB.76.153309
出版狀態	Published - 2007 10月 23

All Science Journal Classification (ASJC) codes

電子、光磁材料
凝聚態物理學

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10.1103/PhysRevB.76.153309

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引用此

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Single-domain Si (110) -16×2 surface fabricated by electromigration

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