Single mask dual damascene processes

Dung-Ching Perng, Jia Feng Fang, Jhin Wei Chen

研究成果: Article

1 引文 斯高帕斯(Scopus)

摘要

Single mask dual damascene processes are described. The unique mask merges via and modified trench patterns. We design the mask's trench area to have partial transmission using thin chromium or add phase shifted gratings in the trench area to achieve destructive interference for lowering the intensity. Optical proximity correction is used to obtain the desired lithography process window. Upon exposure, the trench results in a partial exposure while the via is fully exposed and a dual damascene (DD) photoresist profile is created within specifications. Following with an integrated etch can complete the DD image transfer into the underneath dielectric. A single mask DD process eliminates via/trench misalignment issues, can save up to one half of metal mask cost, and 50% of other processing costs. It is expected to also boost yield and improve product reliability.

原文English
頁(從 - 到)599-602
頁數4
期刊Microelectronic Engineering
85
發行號3
DOIs
出版狀態Published - 2008 三月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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