Single-mode InGaAs photonic crystal vertical-cavity surface-emitting lasers emitting at 1170 nm

Tzong Bin Wang, Wei-Chou Hsu, I. Liang Chen, Tsin Dong Lee, Ke Hua Su, H. P D Yang, Chih Hung Chiou

研究成果: Article

3 引文 斯高帕斯(Scopus)

摘要

Fabrication and performance of large-detuning InGaAsGaAs strained, double-quantum-well, proton-implanted photonic crystal, vertical-cavity surface-emitting lasers is reported. The proton implant aperture is used to confine the current flow and the single-point defect photonic crystal is used to confine the optical mode, while the oxide aperture is introduced to reduce the leakage current. Single fundamental mode (side-mode suppression ratio >20 dB) continuous wave output power of 0.18 mW has been achieved in the 1170 nm range at room temperature.

原文English
期刊Journal of the Electrochemical Society
154
發行號5
DOIs
出版狀態Published - 2007 四月 10

All Science Journal Classification (ASJC) codes

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

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