SINGLE PORT SRAM MEMORY CELL DRIVEN BY TWO WORD LINES IN ASYNCHRONOUS MANNER AND MEMORY EMPLOYING THE SAME

貢獻的翻譯標題: 雙字線非同步驅動的記憶細胞及具此記憶細胞的記憶體

Lih-Yih Chiou (Inventor)

研究成果: Patent

摘要

A memory cell driven by two word lines in an asynchronous manner and a memory composed thereof are provided. The memory has a hold mode, a read mode and a write mode. The memory cell includes a first write switch, a second write switch and a latch. The first write switch is electrically connected to a first word line and is turned on by a first turn-on signal transmitted by the first word line. The second write switch is electrically connected to a second word line and is turned on by a second turn-on signal transmitted by the second word line. When the memory is in the write mode, the second write switch is turned on by the second turn-on signal having a delay with respect to the first turn-on signal, thereby blocking the pseudo read of the unselected memory cell.
貢獻的翻譯標題雙字線非同步驅動的記憶細胞及具此記憶細胞的記憶體
原文English
專利號9715922
出版狀態Published - 1800

指紋 深入研究「雙字線非同步驅動的記憶細胞及具此記憶細胞的記憶體」主題。共同形成了獨特的指紋。

  • 引用此