Single-power-supply-based transformerless IGBT/MOSFET gate driver with 100% high-side turn-on duty cycle operation performance using auxiliary bootstrapped charge pumper

Ray L. Lin, Fred C. Lee

研究成果: Conference article同行評審

17 引文 斯高帕斯(Scopus)

摘要

Using an invented auxiliary bootstrapped charge pumper, a smart new design of single-power-supply-based transformerless IGBT/MOSFET gate driver with 100% high-side turn-on duty cycle operation performance is proposed in this paper. The experimental results of the proposed circuit have been obtained to verify the power sourcing performance of the invented transformerless auxiliary bootstrapped charge pumper for the high-side driving circuit of the single-level two-switch half-bridge using the same single power supply of the low-side driving circuit. Also, with the help of the invented auxiliary bootstrapped charge pumper, the application of the single-level two-switch half-bridge can be extended to the applications of multi-level multi-switch half-bridges.

原文English
頁(從 - 到)1205-1209
頁數5
期刊PESC Record - IEEE Annual Power Electronics Specialists Conference
2
出版狀態Published - 1997 一月 1
事件Proceedings of the 1997 28th Annual IEEE Power Electronics Specialists Conference, PESC. Part 1 (of 2) - St.Louis, CA, USA
持續時間: 1997 六月 231997 六月 26

All Science Journal Classification (ASJC) codes

  • 建模與模擬
  • 凝聚態物理學
  • 能源工程與電力技術
  • 電氣與電子工程

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