Using an invented auxiliary bootstrapped charge pumper, a smart new design of single-power-supply-based transformerless IGBT/MOSFET gate driver with 100% high-side turn-on duty cycle operation performance is proposed in this paper. The experimental results of the proposed circuit have been obtained to verify the power sourcing performance of the invented transformerless auxiliary bootstrapped charge pumper for the high-side driving circuit of the single-level two-switch half-bridge using the same single power supply of the low-side driving circuit. Also, with the help of the invented auxiliary bootstrapped charge pumper, the application of the single-level two-switch half-bridge can be extended to the applications of multi-level multi-switch half-bridges.
|頁（從 - 到）||1205-1209|
|期刊||PESC Record - IEEE Annual Power Electronics Specialists Conference|
|出版狀態||Published - 1997 一月 1|
|事件||Proceedings of the 1997 28th Annual IEEE Power Electronics Specialists Conference, PESC. Part 1 (of 2) - St.Louis, CA, USA|
持續時間: 1997 六月 23 → 1997 六月 26
All Science Journal Classification (ASJC) codes