SiNx deposited by in-line PECVD for multi-crystalline silicon solar cells

M. C. Wei, S. J. Chang, C. Y. Tsia, C. H. Liu, S. C. Chen

研究成果: Article同行評審

21 引文 斯高帕斯(Scopus)

摘要

SiNx:H anti-reflective coating (ARC) layers were successfully grown by an in-line plasma enhanced chemical vapor deposition (PECVD) system with an extremely high throughput. Film thickness and refractive index of the as-grown samples were evaluated as functions of growth parameters, such as growth pressure, total gas flow rate, radio frequency (RF) power and SiH 4 to NH3 gas ratio. It was found that we could achieve high quality films with proper growth conditions and proper post-deposition annealing.

原文English
頁(從 - 到)215-219
頁數5
期刊Solar Energy
80
發行號2
DOIs
出版狀態Published - 2006 二月

All Science Journal Classification (ASJC) codes

  • 可再生能源、永續發展與環境
  • 材料科學(全部)

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