SiNx deposited by in-line PECVD for multi-crystalline silicon solar cells

M. C. Wei; S. J. Chang; C. Y. Tsia; C. H. Liu; S. C. Chen

doi:10.1016/j.solener.2005.05.015

SiN_x deposited by in-line PECVD for multi-crystalline silicon solar cells

M. C. Wei
, S. J. Chang
, C. Y. Tsia
, C. H. Liu
, S. C. Chen

微電子工程研究所

研究成果: Article › 同行評審

26 引文斯高帕斯（Scopus）

摘要

SiN_x:H anti-reflective coating (ARC) layers were successfully grown by an in-line plasma enhanced chemical vapor deposition (PECVD) system with an extremely high throughput. Film thickness and refractive index of the as-grown samples were evaluated as functions of growth parameters, such as growth pressure, total gas flow rate, radio frequency (RF) power and SiH ₄ to NH₃ gas ratio. It was found that we could achieve high quality films with proper growth conditions and proper post-deposition annealing.

原文	English
頁（從 - 到）	215-219
頁數	5
期刊	Solar Energy
卷	80
發行號	2
DOIs	https://doi.org/10.1016/j.solener.2005.05.015
出版狀態	Published - 2006 2月

UN SDG

此研究成果有助於以下永續發展目標

SDG 7 經濟實惠的清潔能源

All Science Journal Classification (ASJC) codes

可再生能源、永續發展與環境
一般材料科學

存取文件

10.1016/j.solener.2005.05.015

其它文件與鏈接

引用此

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AU - Chang, S. J.

AU - Tsia, C. Y.

AU - Liu, C. H.

AU - Chen, S. C.

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