SiO₂ nanopillars on microscale roughened surface of GaN-based light-emitting diodes by SILAR-Based method

We reported the SiO₂ nanopillars on microscale roughened surface on GaN-based LED to enhance light-extraction efficiency. ZnO nanoparticles were deposited on SiO₂ as an etching mask before ICP etching SiO ₂ by successive ionic layer adsorption and reaction method (SILAR), and the different heights of SiO₂ nanopillars on microroughened ITO/GaN were obtained after etching. Compared to a regular (flat surface) GaN-based LED, the light output power for a LED with microroughening was increased by 33%. Furthermore, the proposed LEDs with SiO₂ nanopillars on microroughened surface show the enhancement in light output power by 42.7%-49.1% at 20 mA. The increase in light output power is mostly attributed to reduction in Fresnel reflection by rough surface. The height of SiO₂ nanopillars was increasing cause resulting in more rough on the microscale surface of GaN-based LEDs.