SiSiGe-based edge-coupled photodiode with partially p-doped photoabsorption layer for high responsivity and high-power performance

J. W. Shi, P. H. Chiu, F. H. Huang, Y. S. Wu, Ja Yu Lu, C. K. Sun, C. W. Liu, P. S. Chen

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

We demonstrate a SiSiG -based edge-coupled photodiode that can achieve high-speed, high output power, and high responsivity performance at a wavelength of 830 nm for application to short-reach fiber communication. We incorporate a p -type-doped Si Si0.5 Ge0.5 -based superlattice with a Si-based depletion layer to enhance the photoabsorption process and minimize the hole-trapping problem of the SiSiGe multiple quantum well. An extremely high bandwidth-efficiency product performance (10 GHz, 276%, 27.6 GHz) and high peak output voltage (1.5 V) have been achieved simultaneously by operating this device in the avalanche regime.

原文English
文章編號193506
期刊Applied Physics Letters
88
發行號19
DOIs
出版狀態Published - 2006

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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