Size effect in the electronic transport of thin films of Bi2Se3

V. V. Marchenkov, V. V. Chistyakov, J. C.A. Huang, Y. A. Perevozchikova, A. N. Domozhirova, M. Eisterer

研究成果: Conference article同行評審

6 引文 斯高帕斯(Scopus)

摘要

Thin films of a topological insulator (TI) Bi2Se3 of various thicknesses from 20 nm to 75 nm were obtained. The resistivity measurements were carried out according to the conventional 4-contact DC technique. This allows to "separate" the bulk and surface conductivities at different temperatures and magnetic fields. It was suggested that similar effects should be observed in other TIs and systems with inhomogeneous distribution of dc-current on sample cross section.

原文English
文章編號01002
期刊EPJ Web of Conferences
185
DOIs
出版狀態Published - 2018 七月 4
事件2017 Moscow International Symposium on Magnetism, MISM 2017 - Moscow, Russian Federation
持續時間: 2017 七月 12017 七月 5

All Science Journal Classification (ASJC) codes

  • 物理與天文學 (全部)

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