Smart Design of Resistive Switching Memory by an In Situ Current-Induced Oxidization Process on a Single Crystalline Metallic Nanowire

Yu Chuan Shih, Ling Lee, Kai De Liang, Arumugam Manikandan, Wen Wu Liu, Yu Ze Chen, Mu Tung Chang, Zhiming M. Wang, Yu Lun Chueh

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

Resistive switching random access memory (ReRAM) has recently generated significant interest due to its potentials used in nanoscale logic, memory devices, and neuromorphic applications. From the device physics, a uniform dielectric layer is necessary to access as the main switching layer to perform stable resistive switching. This, however, makes the fabrication process more challenging. In this regard, a design of resistive switching memory by an in situ current-induced oxidization process on a single crystal metallic nanowire (NW) is demonstrated where a single crystal Cu NW is found as the best material with stable switching behaviors after the in situ current-induced oxidization process. With the in situ current-induced oxidization process by high current density on the Cu NW, a reversible resistive switching up to 100 cycles with a large ON/OFF ratio of >103 and a low switching voltage of <0.5 V can be obtained. The initial current-induced oxidation provides a core–shell (Cu2O/Cu) nanowire structure that contributed to the switching properties. The possible switching mechanisms and potential guidelines are systematically proposed. The current work opens up the opportunities to design the ReRAM device with full- metallic materials.

原文English
文章編號2000252
期刊Advanced Electronic Materials
7
發行號5
DOIs
出版狀態Published - 2021 5月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料

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