Sol-gel barium titanate-based RRAM by inserting graphene oxide interlayer

研究成果: Conference contribution

2 引文 斯高帕斯(Scopus)

摘要

The barium titanate-based (BTO-based) resistive random-access memory (RRAM) was successfully fabricated by sol-gel process. The ITO/BTO/Al structure showed stable switching behaviors due to it can offer smooth surface by sol-gel methods. Moreover, based on this structure inserted with graphene oxide (GO) interlayers, the device exhibited good stability and enhancement of the on/off current ratio about two orders, which can be attributed to absorption/release of oxygen related functional groups of GO.

原文English
主出版物標題2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012
DOIs
出版狀態Published - 2012 12月 1
事件2012 8th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2012 - Bangkok, Thailand
持續時間: 2012 12月 32012 12月 5

出版系列

名字2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012

Other

Other2012 8th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2012
國家/地區Thailand
城市Bangkok
期間12-12-0312-12-05

All Science Journal Classification (ASJC) codes

  • 硬體和架構
  • 電氣與電子工程

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