Sol-gel derived TiNb2O7 dielectric thin films for transparent electronic applications

Ming Chuan Chang, Chieh Szu Huang, Yi Da Ho, Cheng Liang Huang

研究成果: Article同行評審

12 引文 斯高帕斯(Scopus)


To reduce power consumption of transparent oxide-semiconductor thin film transistors, a gate dielectric material with high dielectric constant and low leakage current density is favorable. According to previous study, the bulk TiNb2O7 with outstanding dielectric properties may have an interest in its thin-film form. The optical, chemical states and surface morphology of sol-gel derived TiNb2O7 (TNO) thin films are investigated the effect of postannealing temperature lower than 500°C, which is crucial to the glass transition temperature. All films possess a transmittance near 80% in the visible region. The existence of non-lattice oxygen in the TNO film is proposed. The peak area ratio of non-lattice oxygen plays an important role in the control of leakage current density of MIM capacitors. Also, the capacitance density and dissipation factor were affected by the indium tin oxide (ITO) sheet resistance at high frequencies. The sample after postannealing at 300°C and electrode-annealing at 150°C possesses a high dielectric constant (>30 at 1 MHz) and a low leakage current density (<1 × 10−6 A/cm2 at 1 V), which makes it a very promising gate dielectric material for transparent oxide-semiconductor thin film transistors.

頁(從 - 到)674-682
期刊Journal of the American Ceramic Society
出版狀態Published - 2018 2月

All Science Journal Classification (ASJC) codes

  • 陶瓷和複合材料
  • 材料化學


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