Sol-gel strontium titanate nickelate thin films for flexible nonvolatile memory applications

Ke Jing Lee, Yu Chi Chang, Cheng Jung Lee, Li Wen Wang, Yeong Her Wang, Dei Wei Chou

研究成果: Conference contribution

摘要

Bipolar resistive switching random access memory (RRAM) devices on a plastic substrate are investigated. Strontium titanate nickelate (STN) thin film prepared by sol-gel method served as insulator on an Al/STN/ITO/PET structure. The STN-based flexible RRAM shows a high ON/OFF resistance ratio (≥ 105) and a retention ability of over 105 s. The characteristics of Ni in the STO thin films demonstrate that spin casting without doping other elements or any complex processes can be used to fabricate thin films with higher density of oxygen vacancies, less particles, and smoother surface. In addition, the fabricated devices on a flexible plastic substrate exhibit excellent durability upon repeated bending tests, demonstrating the potential for flexible and low-cost memory applications.

原文English
主出版物標題7th IEEE International Nanoelectronics Conference 2016, INEC 2016
發行者IEEE Computer Society
ISBN(電子)9781467389693
DOIs
出版狀態Published - 2016 10月 12
事件7th IEEE International Nanoelectronics Conference, INEC 2016 - Chengdu, China
持續時間: 2016 5月 92016 5月 11

出版系列

名字Proceedings - International NanoElectronics Conference, INEC
2016-October
ISSN(列印)2159-3523

Other

Other7th IEEE International Nanoelectronics Conference, INEC 2016
國家/地區China
城市Chengdu
期間16-05-0916-05-11

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程

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