Solar Blind Ultraviolet Photodetectors with High Dynamic Resistance Using Zn3Ta2O5 Layer

Chia Hsun Chen, Ching Ting Lee

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

The vapor cooling condensation system was utilized to deposit the homostructured n-ZnO:In/i-ZnO/p-ZnO:LiNO3 and heterostructured n-ZnO:In/i-Zn3Ta2O5/p-ZnO:LiNO3 on sapphire substrates. The zero bias dynamic resistance of the latter ones was improved to 2.43× 10-12Ω compared with 7.94× 10-11 Ω of the former ones. Using the photoelectrochemical (PEC) oxidation method to treat the heterostructured n-ZnO:In/i-Zn3Ta2O5/p-ZnO:LiNO3 ultraviolet photodetectors, the zero bias dynamic resistance was further improved to 6.02× 10-12 Ω. The sensing and the noise performances of the ultraviolet photodetectors were effectively improved by the Zn3Ta2O5 absorption layer and the PEC oxidation method.

原文English
文章編號7120909
頁(從 - 到)1817-1820
頁數4
期刊IEEE Photonics Technology Letters
27
發行號17
DOIs
出版狀態Published - 2015 九月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

指紋 深入研究「Solar Blind Ultraviolet Photodetectors with High Dynamic Resistance Using Zn<sub>3</sub>Ta<sub>2</sub>O<sub>5</sub> Layer」主題。共同形成了獨特的指紋。

引用此