Solar Blind Ultraviolet Photodetectors with High Dynamic Resistance Using Zn3Ta2O5 Layer

Chia Hsun Chen; Ching Ting Lee

doi:10.1109/LPT.2015.2443502

Solar Blind Ultraviolet Photodetectors with High Dynamic Resistance Using Zn₃Ta₂O₅ Layer

Chia Hsun Chen
, Ching Ting Lee

光電科學與工程學系

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

摘要

The vapor cooling condensation system was utilized to deposit the homostructured n-ZnO:In/i-ZnO/p-ZnO:LiNO₃ and heterostructured n-ZnO:In/i-Zn₃Ta₂O₅/p-ZnO:LiNO₃ on sapphire substrates. The zero bias dynamic resistance of the latter ones was improved to 2.43× 10^-12Ω compared with 7.94× 10^-11 Ω of the former ones. Using the photoelectrochemical (PEC) oxidation method to treat the heterostructured n-ZnO:In/i-Zn₃Ta₂O₅/p-ZnO:LiNO₃ ultraviolet photodetectors, the zero bias dynamic resistance was further improved to 6.02× 10^-12 Ω. The sensing and the noise performances of the ultraviolet photodetectors were effectively improved by the Zn₃Ta₂O₅ absorption layer and the PEC oxidation method.

原文	English
文章編號	7120909
頁（從 - 到）	1817-1820
頁數	4
期刊	IEEE Photonics Technology Letters
卷	27
發行號	17
DOIs	https://doi.org/10.1109/LPT.2015.2443502
出版狀態	Published - 2015 9月 1

All Science Journal Classification (ASJC) codes

電子、光磁材料
原子與分子物理與光學
電氣與電子工程

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10.1109/LPT.2015.2443502

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引用此

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title = "Solar Blind Ultraviolet Photodetectors with High Dynamic Resistance Using Zn3Ta2O5 Layer",

abstract = "The vapor cooling condensation system was utilized to deposit the homostructured n-ZnO:In/i-ZnO/p-ZnO:LiNO3 and heterostructured n-ZnO:In/i-Zn3Ta2O5/p-ZnO:LiNO3 on sapphire substrates. The zero bias dynamic resistance of the latter ones was improved to 2.43× 10-12Ω compared with 7.94× 10-11 Ω of the former ones. Using the photoelectrochemical (PEC) oxidation method to treat the heterostructured n-ZnO:In/i-Zn3Ta2O5/p-ZnO:LiNO3 ultraviolet photodetectors, the zero bias dynamic resistance was further improved to 6.02× 10-12 Ω. The sensing and the noise performances of the ultraviolet photodetectors were effectively improved by the Zn3Ta2O5 absorption layer and the PEC oxidation method.",

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N2 - The vapor cooling condensation system was utilized to deposit the homostructured n-ZnO:In/i-ZnO/p-ZnO:LiNO3 and heterostructured n-ZnO:In/i-Zn3Ta2O5/p-ZnO:LiNO3 on sapphire substrates. The zero bias dynamic resistance of the latter ones was improved to 2.43× 10-12Ω compared with 7.94× 10-11 Ω of the former ones. Using the photoelectrochemical (PEC) oxidation method to treat the heterostructured n-ZnO:In/i-Zn3Ta2O5/p-ZnO:LiNO3 ultraviolet photodetectors, the zero bias dynamic resistance was further improved to 6.02× 10-12 Ω. The sensing and the noise performances of the ultraviolet photodetectors were effectively improved by the Zn3Ta2O5 absorption layer and the PEC oxidation method.

AB - The vapor cooling condensation system was utilized to deposit the homostructured n-ZnO:In/i-ZnO/p-ZnO:LiNO3 and heterostructured n-ZnO:In/i-Zn3Ta2O5/p-ZnO:LiNO3 on sapphire substrates. The zero bias dynamic resistance of the latter ones was improved to 2.43× 10-12Ω compared with 7.94× 10-11 Ω of the former ones. Using the photoelectrochemical (PEC) oxidation method to treat the heterostructured n-ZnO:In/i-Zn3Ta2O5/p-ZnO:LiNO3 ultraviolet photodetectors, the zero bias dynamic resistance was further improved to 6.02× 10-12 Ω. The sensing and the noise performances of the ultraviolet photodetectors were effectively improved by the Zn3Ta2O5 absorption layer and the PEC oxidation method.

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Solar Blind Ultraviolet Photodetectors with High Dynamic Resistance Using Zn3Ta2O5 Layer

摘要

All Science Journal Classification (ASJC) codes

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Solar Blind Ultraviolet Photodetectors with High Dynamic Resistance Using Zn₃Ta₂O₅ Layer