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Solar-blind UV Schottky barrier photodetectors formed by Au/Ni on β-(Al
x
Ga
1−x
)
2
O
3
/AlGaN heterostructures
Ping Feng Chi
, Wei Che Chang
, Ming Lun Lee
,
Jinn Kong Sheu
光電科學與工程學系
研究成果
:
Article
›
同行評審
9
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引文 斯高帕斯（Scopus）
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指紋
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深入研究「Solar-blind UV Schottky barrier photodetectors formed by Au/Ni on β-(Al
x
Ga
1−x
)
2
O
3
/AlGaN heterostructures」主題。共同形成了獨特的指紋。
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Keyphrases
Heterostructure
100%
N-GaN
100%
Schottky Barrier Photodetectors
100%
Solar-blind
100%
Aluminum Gallium Nitride (AlGaN)
100%
Au-Ni
100%
GaN Heterostructure
50%
Ga2O3
33%
GaN Layers
33%
X Ray Diffraction
33%
Responsivity
33%
Heteroepitaxial Layers
33%
Band Gap
16%
Diffraction
16%
Reverse Bias
16%
Rejection Ratio
16%
TiAl
16%
Cutoff Wavelength
16%
X-ray Photoelectron Spectroscopy Analysis
16%
Thermal Treatment
16%
X-ray Photoelectron Spectroscopy
16%
Ni-Au
16%
Al Content
16%
Diffraction Peak
16%
Processing Temperature
16%
Incident Light
16%
Light Wavelength
16%
Metal Contact
16%
NiTi
16%
Core Level
16%
Thermal Oxidation
16%
Diffraction Ray
16%
Process Duration
16%
Engineering
Heterostructures
100%
Photometer
100%
Schottky Barrier
100%
Responsivity
50%
Ray Diffraction
50%
Ray Photoelectron Spectroscopy
50%
Band Gap
25%
Thin Films
25%
Reverse Bias
25%
Cutoff Wavelength
25%
Metal Contact
25%
Temperature Time
25%
Light Incident
25%
Duration Time
25%
Core Level
25%
Thermal Oxidation
25%
Al Content
25%
Level Peak
25%
Material Science
Photosensor
100%
Heterojunction
100%
Schottky Barrier
100%
Film
50%
X-Ray Photoelectron Spectroscopy
50%
X-Ray Diffraction
50%
Thin Films
25%
Earth and Planetary Sciences
Photometer
100%
X Ray
66%
X Ray Diffraction
66%
Photoelectron Spectroscopy
66%
Thin Films
33%
Energy Gaps (Solid State)
33%
Physics
Photometer
100%
X Ray Spectroscopy
66%
X Ray Diffraction
66%
Thin Films
33%
Energy Gaps (Solid State)
33%