Solid-phase epitaxial regrowth and dopant activation of arsenic-implanted metastable pseudomorphic Ge0.08Si0.92 and Ge0.16Si0.84 on Si(100)

D. Y.C. Lie, J. H. Song, M. A. Nicolet, N. D. Theodore, J. Candelaria, S. G. Thomas, M. O. Tanner, K. L. Wang

研究成果: Conference article同行評審

指紋

深入研究「Solid-phase epitaxial regrowth and dopant activation of arsenic-implanted metastable pseudomorphic Ge<sub>0.08</sub>Si<sub>0.92</sub> and Ge<sub>0.16</sub>Si<sub>0.84</sub> on Si(100)」主題。共同形成了獨特的指紋。

Engineering & Materials Science

Physics & Astronomy

Chemical Compounds