Solid-phase reaction of tungsten thin films with polycrystalline diamond

A. Bachli, J. S. Chen, R. P. Ruiz, M. A. Nicolet

研究成果: Conference article同行評審

3 引文 斯高帕斯(Scopus)


The thermally induced solid-phase reaction of 135 nm thick sputter-deposited W films with polycrystalline CVD-grown diamond substrates is investigated. The samples are annealed in vacuum (5×10-7 torr) at temperatures between 700 °C and 1100 °C for 1 hour and examined by 2 MeV 4He++ backscattering spectrometry, x-ray diffraction, and scanning electron microscopy. The as-deposited W films contain roughly 5 at.% oxygen. After annealing the samples at 800 °C this oxygen concentration falls below the detection limit of less than 1%. Incipient W2C phase formation occurs during annealing at 900 °C. The final state, the WC phase, is reached after annealing at 1100 °C.

頁(從 - 到)247-252
期刊Materials Research Society Symposium - Proceedings
出版狀態Published - 1994 一月 1
事件Proceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA
持續時間: 1994 四月 41994 四月 8

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)
  • 凝聚態物理學
  • 材料力學
  • 機械工業


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