The thermally induced solid-phase reaction of 135 nm thick sputter-deposited W films with polycrystalline CVD-grown diamond substrates is investigated. The samples are annealed in vacuum (5×10-7 torr) at temperatures between 700 °C and 1100 °C for 1 hour and examined by 2 MeV 4He++ backscattering spectrometry, x-ray diffraction, and scanning electron microscopy. The as-deposited W films contain roughly 5 at.% oxygen. After annealing the samples at 800 °C this oxygen concentration falls below the detection limit of less than 1%. Incipient W2C phase formation occurs during annealing at 900 °C. The final state, the WC phase, is reached after annealing at 1100 °C.
|頁（從 - 到）||247-252|
|期刊||Materials Research Society Symposium - Proceedings|
|出版狀態||Published - 1994 一月 1|
|事件||Proceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA|
持續時間: 1994 四月 4 → 1994 四月 8
All Science Journal Classification (ASJC) codes