TY - JOUR
T1 - Solid-phase reaction of tungsten thin films with polycrystalline diamond
AU - Bachli, A.
AU - Chen, J. S.
AU - Ruiz, R. P.
AU - Nicolet, M. A.
PY - 1994/1/1
Y1 - 1994/1/1
N2 - The thermally induced solid-phase reaction of 135 nm thick sputter-deposited W films with polycrystalline CVD-grown diamond substrates is investigated. The samples are annealed in vacuum (5×10-7 torr) at temperatures between 700 °C and 1100 °C for 1 hour and examined by 2 MeV 4He++ backscattering spectrometry, x-ray diffraction, and scanning electron microscopy. The as-deposited W films contain roughly 5 at.% oxygen. After annealing the samples at 800 °C this oxygen concentration falls below the detection limit of less than 1%. Incipient W2C phase formation occurs during annealing at 900 °C. The final state, the WC phase, is reached after annealing at 1100 °C.
AB - The thermally induced solid-phase reaction of 135 nm thick sputter-deposited W films with polycrystalline CVD-grown diamond substrates is investigated. The samples are annealed in vacuum (5×10-7 torr) at temperatures between 700 °C and 1100 °C for 1 hour and examined by 2 MeV 4He++ backscattering spectrometry, x-ray diffraction, and scanning electron microscopy. The as-deposited W films contain roughly 5 at.% oxygen. After annealing the samples at 800 °C this oxygen concentration falls below the detection limit of less than 1%. Incipient W2C phase formation occurs during annealing at 900 °C. The final state, the WC phase, is reached after annealing at 1100 °C.
UR - https://www.scopus.com/pages/publications/0028752538
UR - https://www.scopus.com/pages/publications/0028752538#tab=citedBy
U2 - 10.1557/proc-339-247
DO - 10.1557/proc-339-247
M3 - Conference article
AN - SCOPUS:0028752538
SN - 0272-9172
VL - 339
SP - 247
EP - 252
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
T2 - Proceedings of the 1994 MRS Spring Meeting
Y2 - 4 April 1994 through 8 April 1994
ER -