Solution-growth ZnO nanorods for light extraction in GaN-based flip-chip LEDs

Nan Ming Lin, Shih Chang Shei, Shoou Jinn Chang

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

A simple and low-cost successive ionic layer adsorption and reaction and hydrothermal method was used to form ZnO nanorods sapphire surface for GaN-based power flip-chip (FC) light-emitting diodes (LEDs).With 350-mA current injection, it was found that the output powers were 361.7 and 448.2 mW for the FC LED without ZnO nanorods and with ZnO nanorods, respectively. The FC LED with ZnO nanorods was 24% larger than that of the FC LED without ZnO nanorods. Furthermore, it was also found that the formation of ZnO nanorods on the surface of sapphire will not degrade the electrical properties.

原文English
頁(從 - 到)R23-R25
期刊ECS Solid State Letters
4
發行號4
DOIs
出版狀態Published - 2015

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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