Solution-processed Al-chelated gelatin for highly transparent non-volatile memory applications

研究成果: Article同行評審

16 引文 斯高帕斯(Scopus)

摘要

Using the biomaterial of Al-chelated gelatin (ACG) prepared by sol-gel method in the ITO/ACG/ITO structure, a highly transparent resistive random access memory (RRAM) was obtained. The transmittance of the fabricated device is approximately 83% at 550 nm while that of Al/gelatin/ITO is opaque. As to the ITO/gelatin/ITO RRAM, no resistive switching behavior can be seen. The ITO/ACG/ITO RRAM shows high ON/OFF current ratio (>105), low operation voltage, good uniformity, and retention characteristics at room temperature and 85 °C. The mechanism of the ACG-based memory devices is presented. The enhancement of these electrical properties can be attributed to the chelate effect of Al ions with gelatin. Results show that transparent ACG-based memory devices possess the potential for next-generation resistive memories and bio-electronic applications.

原文English
文章編號123302
期刊Applied Physics Letters
106
發行號12
DOIs
出版狀態Published - 2015 三月 23

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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