Solution-processed dual-layer Pt-SiO₂ core-shell nanoparticles for nanocrystal memory with multi-bit storage states

We developed all-solution-processed dual-layer high-density Pt-SiO₂ core-shell nanoparticles with ultra-thin interparticle layers within a uniform HfO₂ matrix for application of nanocrystal memory. This device exhibited a clear step-like capacitance-voltage behavior at low operation voltage and four level states with a good retention property. Such a high memory performance could be attributed to the well-defined layer memory structure, high quality of the shell of nanoparticles and the interparticle layer between nanoparticle rows, appropriate nature property of Pt nanoparticles, and good material combinations of device structure. This sub-nanometer thick interparticle layer was successfully prepared through the self-assembly 3-aminopropyltrimethoxysilane (APTMS) mediated SiO₂ layer, which was critical for superior multilayered device. The study result also infers Pt nanoparticles have good potential for nano-device application. We demonstrated this low-cost solution process with a low thermal budget provided a reliable approach to fabricate multilayered nanoparticle-based devices with tunable material, structure, and performance. It offers a high potential application of solution-processed nanocomposite devices for nanoparticle-based electronics.