Natural konjac glucomannan (KGM)-based resistive random access memory (RRAM) devices using a simple solution process were illustrated. The memory properties of the KGM-based resistive layer under study were determined by the relationship between the physical properties of KGM thin film and the performance of RRAM. The memory properties in the KGM thin films with four different top electrodes (Ti, Al, Au, and Ni) and ITO as bottom electrodes were also investigated, depending on their different work function differences. The optimized Al/KGM/ITO structure with AlOx interfacial layer was between Al electrode and the KGM film, which produced good resistive-switching properties in the order of 100 cycles with uniform DC cyclic efficiency and a good retention ability of more than 104 s at room temperature. In addition, the surface of KGM thin films to decrease the baking temperature with KGM content of 1% induced the sp3 hybridization of carbon; hence, a simple method for fabricating a RRAM device with high ON/OFF ratio (>104) was provided. Energy-dispersive X-ray spectroscopy line-scan analyses demonstrated that the formation and rupture of carbon-based filament paths, the dominant mechanism in resistive switching, can be construed. This work helps in understanding the resistive switching of KGM-based RRAM and maintaining stable operations, which are important in increasing the application of KGM in electronic devices.
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