摘要
Direct growth of high-quality graphene on dielectric substrates without a sophisticated transfer process is one of the key challenges to effectively integrate graphene synthesis with the existing semiconductor manufacturing process. In this study, we take advantages offered by a customized reactor to realize the synthesis of uniform transfer-free graphene monolayers on SiO2/Si substrates via the metal-catalytic chemical vapor deposition method. The optimal reactor is designed to be a Ni-covered quartz slit with a confined reaction space (length × width × height = 85 × 13 × 0.55 mm3). The slit structure of this reactor offers a spatially confined environment for effectively suppressing Cu evaporation and modulating the growth kinetics of graphene. In addition, the Ni cover serves as a carbon absorbent for regulating the local concentration of carbon species within the slit reactor, which increases the monolayer content of the produced graphene. With the optimal synthesis protocol, transfer-free graphene with low defects and high monolayer content (>90%) was prepared directly on SiO2/Si substrates as continuous large-area films (1 × 1 cm2) or microscale patterns with sheet resistance and field-effect mobility of 334 ω/sq and 962 cm2/(V s), respectively.
原文 | English |
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頁(從 - 到) | 23094-23105 |
頁數 | 12 |
期刊 | Journal of Physical Chemistry C |
卷 | 124 |
發行號 | 42 |
DOIs | |
出版狀態 | Published - 2020 10月 22 |
All Science Journal Classification (ASJC) codes
- 電子、光磁材料
- 一般能源
- 物理與理論化學
- 表面、塗料和薄膜