Spatial Confinement Approach Using Ni to Modulate Local Carbon Supply for the Growth of Uniform Transfer-Free Graphene Monolayers

Cheng Yu Dai, Wei Chun Wang, Chi Ang Tseng, Fang Chi Ding, Yit Tsong Chen, Chiao Chen Chen

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

Direct growth of high-quality graphene on dielectric substrates without a sophisticated transfer process is one of the key challenges to effectively integrate graphene synthesis with the existing semiconductor manufacturing process. In this study, we take advantages offered by a customized reactor to realize the synthesis of uniform transfer-free graphene monolayers on SiO2/Si substrates via the metal-catalytic chemical vapor deposition method. The optimal reactor is designed to be a Ni-covered quartz slit with a confined reaction space (length × width × height = 85 × 13 × 0.55 mm3). The slit structure of this reactor offers a spatially confined environment for effectively suppressing Cu evaporation and modulating the growth kinetics of graphene. In addition, the Ni cover serves as a carbon absorbent for regulating the local concentration of carbon species within the slit reactor, which increases the monolayer content of the produced graphene. With the optimal synthesis protocol, transfer-free graphene with low defects and high monolayer content (>90%) was prepared directly on SiO2/Si substrates as continuous large-area films (1 × 1 cm2) or microscale patterns with sheet resistance and field-effect mobility of 334 ω/sq and 962 cm2/(V s), respectively.

原文English
頁(從 - 到)23094-23105
頁數12
期刊Journal of Physical Chemistry C
124
發行號42
DOIs
出版狀態Published - 2020 10月 22

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 能源(全部)
  • 物理與理論化學
  • 表面、塗料和薄膜

指紋

深入研究「Spatial Confinement Approach Using Ni to Modulate Local Carbon Supply for the Growth of Uniform Transfer-Free Graphene Monolayers」主題。共同形成了獨特的指紋。

引用此