Special issue on nanowire transistors: Modeling, device design, and technology

M. Jagadesh Kumar; Mark A. Reed; Gehan A.J. Amaratunga; Guy M. Cohen; David B. Janes; Charles M. Lieber; M. Meyyappan; Lars Erik Wernersson; Kang L. Wang; Robert S. Chau; Theodore I. Kamins; Mark Lundstrom; Bin Yu; Chongwu Zhou

doi:10.1109/TED.2008.2006781

Special issue on nanowire transistors: Modeling, device design, and technology

M. Jagadesh Kumar, Mark A. Reed, Gehan A.J. Amaratunga, Guy M. Cohen, David B. Janes, Charles M. Lieber, M. Meyyappan, Lars Erik Wernersson, Kang L. Wang, Robert S. Chau, Theodore I. Kamins, Mark Lundstrom, Bin Yu, Chongwu Zhou

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原文	English
頁（從 - 到）	2813-2819
頁數	7
期刊	IEEE Transactions on Electron Devices
卷	55
發行號	11
DOIs	https://doi.org/10.1109/TED.2008.2006781
出版狀態	Published - 2008

All Science Journal Classification (ASJC) codes

電子、光磁材料
電氣與電子工程

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10.1109/TED.2008.2006781

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Kumar, M. J., Reed, M. A., Amaratunga, G. A. J., Cohen, G. M., Janes, D. B., Lieber, C. M., Meyyappan, M., Wernersson, L. E., Wang, K. L., Chau, R. S., Kamins, T. I., Lundstrom, M., Yu, B., & Zhou, C. (2008). Special issue on nanowire transistors: Modeling, device design, and technology. IEEE Transactions on Electron Devices, 55(11), 2813-2819. https://doi.org/10.1109/TED.2008.2006781

@article{0f7141ce68834facbd22a1fe935c0b40,

title = "Special issue on nanowire transistors: Modeling, device design, and technology",

author = "Kumar, {M. Jagadesh} and Reed, {Mark A.} and Amaratunga, {Gehan A.J.} and Cohen, {Guy M.} and Janes, {David B.} and Lieber, {Charles M.} and M. Meyyappan and Wernersson, {Lars Erik} and Wang, {Kang L.} and Chau, {Robert S.} and Kamins, {Theodore I.} and Mark Lundstrom and Bin Yu and Chongwu Zhou",

note = "Funding Information: Kang L. Wang (F{\textquoteright}92) received the Ph.D. degree from the Massachusetts Institute of Technology, Cambridge, in 1970. From 1970 to 1972, he was an Assistant Professor with the Massachusetts Institute of Technology. From 1972 to 1979, he was with the Corporate Research and Development Center, General Electric. In 1979, he was with the Electrical Engineering Department, University of California, Los Angeles (UCLA), where he served as the Chair of this department from 1993 to 1996. He was the Dean of Engineering from 2000 to 2002 with the Hong Kong University of Science and Technology, Kowloon, Hong Kong. He is the holder of the Raytheon Chair Professor of Physical Electronics with the Electrical Engineering Department, UCLA. He also currently serves as the Director of the Focus Center Research Program Center on Functional Engineered Nano Architectonics (FENA), which is an interdisciplinary research center that is funded by the Semiconductor Industry Association and the Department of Defense to address the need of information processing technology beyond scaled CMOS. FENA involves 15 universities across the nation. He was also named the Director of the Western Institute of Nanoelectronics, which is a coordinated multiproject research institute that is funded by the Nanoelectronics Research Initiative, Intel, and the State of California. The current ongoing projects with the University of California, Berkeley, Stanford University, University of California, Santa Barbara, and UCLA are aimed at spintronics for low-power applications. He was also the Founding Director of the Nanoelectronics Research Facility, UCLA (established in 1989), with the infrastructure to further research in nanotechnology. He was the inventor of the strained layer MOSFET, quantum SRAM cell, and band-aligned superlattices. He is the author or coauthor of more than 300 papers published in international journals and conference proceeding. His research activities include semiconductor nanodevices and nanotechnology; self-assembly growth of quantum structures and cooperative assembly of quantum-dot arrays Si-based molecular beam epitaxy, quantum structures and devices; nanoepitaxy of heterostructures; spintronic materials and devices; and SiGe MBE and quantum structures. He is the holder of 17 patents. Dr. Wang serves on the editorial board of the Encyclopedia of Nanoscience and Nanotechnology (American Scientific Publishers), as a Senior Editor of the IEEE TRANSACTIONS ON NANOTECHNOLOGY, and as a Series Editor of Nanoscience and Nanotechnology (Artech House, Boston). He was a recipient of the following awards: the IBM Faculty Award; the Guggenheim Fellow Award; the TSMC Honor Lectureship Award; the Honoris Causa Award from the Politechnic University, Torino, Italy; the Semiconductor Research Corporation Inventor Awards; and the Technical Excellence Achievement Award from Semiconductor Research Corporation. Funding Information: Dr. Zhou is currently an Associate Editor of the IEEE TRANSACTIONS ON NANOTECHNOLOGY. He was a recipient of a number of awards, including the NSF CAREER Award, the NASA TGiR Award, the USC Junior Faculty Research Award, and the IEEE Nanotechnology Early Career Award.",

year = "2008",

doi = "10.1109/TED.2008.2006781",

language = "English",

volume = "55",

pages = "2813--2819",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

}

TY - JOUR

T1 - Special issue on nanowire transistors

T2 - Modeling, device design, and technology

AU - Kumar, M. Jagadesh

AU - Reed, Mark A.

AU - Amaratunga, Gehan A.J.

AU - Cohen, Guy M.

AU - Janes, David B.

AU - Lieber, Charles M.

AU - Meyyappan, M.

AU - Wernersson, Lars Erik

AU - Wang, Kang L.

AU - Chau, Robert S.

AU - Kamins, Theodore I.

AU - Lundstrom, Mark

AU - Yu, Bin

AU - Zhou, Chongwu

N1 - Funding Information: Kang L. Wang (F’92) received the Ph.D. degree from the Massachusetts Institute of Technology, Cambridge, in 1970. From 1970 to 1972, he was an Assistant Professor with the Massachusetts Institute of Technology. From 1972 to 1979, he was with the Corporate Research and Development Center, General Electric. In 1979, he was with the Electrical Engineering Department, University of California, Los Angeles (UCLA), where he served as the Chair of this department from 1993 to 1996. He was the Dean of Engineering from 2000 to 2002 with the Hong Kong University of Science and Technology, Kowloon, Hong Kong. He is the holder of the Raytheon Chair Professor of Physical Electronics with the Electrical Engineering Department, UCLA. He also currently serves as the Director of the Focus Center Research Program Center on Functional Engineered Nano Architectonics (FENA), which is an interdisciplinary research center that is funded by the Semiconductor Industry Association and the Department of Defense to address the need of information processing technology beyond scaled CMOS. FENA involves 15 universities across the nation. He was also named the Director of the Western Institute of Nanoelectronics, which is a coordinated multiproject research institute that is funded by the Nanoelectronics Research Initiative, Intel, and the State of California. The current ongoing projects with the University of California, Berkeley, Stanford University, University of California, Santa Barbara, and UCLA are aimed at spintronics for low-power applications. He was also the Founding Director of the Nanoelectronics Research Facility, UCLA (established in 1989), with the infrastructure to further research in nanotechnology. He was the inventor of the strained layer MOSFET, quantum SRAM cell, and band-aligned superlattices. He is the author or coauthor of more than 300 papers published in international journals and conference proceeding. His research activities include semiconductor nanodevices and nanotechnology; self-assembly growth of quantum structures and cooperative assembly of quantum-dot arrays Si-based molecular beam epitaxy, quantum structures and devices; nanoepitaxy of heterostructures; spintronic materials and devices; and SiGe MBE and quantum structures. He is the holder of 17 patents. Dr. Wang serves on the editorial board of the Encyclopedia of Nanoscience and Nanotechnology (American Scientific Publishers), as a Senior Editor of the IEEE TRANSACTIONS ON NANOTECHNOLOGY, and as a Series Editor of Nanoscience and Nanotechnology (Artech House, Boston). He was a recipient of the following awards: the IBM Faculty Award; the Guggenheim Fellow Award; the TSMC Honor Lectureship Award; the Honoris Causa Award from the Politechnic University, Torino, Italy; the Semiconductor Research Corporation Inventor Awards; and the Technical Excellence Achievement Award from Semiconductor Research Corporation. Funding Information: Dr. Zhou is currently an Associate Editor of the IEEE TRANSACTIONS ON NANOTECHNOLOGY. He was a recipient of a number of awards, including the NSF CAREER Award, the NASA TGiR Award, the USC Junior Faculty Research Award, and the IEEE Nanotechnology Early Career Award.

PY - 2008

Y1 - 2008

UR - http://www.scopus.com/inward/record.url?scp=56549130979&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=56549130979&partnerID=8YFLogxK

U2 - 10.1109/TED.2008.2006781

DO - 10.1109/TED.2008.2006781

M3 - Editorial

AN - SCOPUS:56549130979

SN - 0018-9383

VL - 55

SP - 2813

EP - 2819

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 11

ER -