TY - JOUR
T1 - Spectroscopic characterization of β-FeSi 2 single crystals and homoepitaxial β-FeSi 2 films by XPS and XAS
AU - Esaka, F.
AU - Yamamoto, H.
AU - Udono, H.
AU - Matsubayashi, N.
AU - Yamaguchi, K.
AU - Shamoto, S.
AU - Magara, M.
AU - Kimura, T.
N1 - Funding Information:
This work has been performed with the approval of the Photon Factory Program Advisory Committee (PF-PAC No. 2008G575). This work was partially supported by the Grant-in-Aid for Scientific Research (C) (No. 21560765), Japan Society for the Promotion of Science (JSPS).
PY - 2011
Y1 - 2011
N2 - Chemical state analysis by a combination of X-ray photoelectron spectroscopy (XPS) and X-ray absorption spectroscopy (XAS) using synchrotron radiation is performed for β-FeSi 2 single crystals and homoepitaxial β-FeSi 2 films. The Si 2p XPS and Fe L-edge XAS spectra imply that the annealing at 1173 K to remove native oxide layers on the crystal induces the formation of FeSi in the surface. The formation of FeSi is also confirmed by Si K-edge XAS analysis. For the homoepitaxial β-FeSi 2 films grown on the crystals, the Si K-edge XAS spectra indicate that structurally homogeneous β-FeSi 2 films can be grown on the β-FeSi 2 single crystals when the substrate temperatures of 973 and 1073 K are applied for molecular beam epitaxy (MBE). Consequently, it is indicated that the combination of XPS and XAS using synchrotron radiation is a useful tool to clarify chemical states of β-FeSi 2 single crystals and homoepitaxial β-FeSi 2 films, which is important to reveal optimized growth conditions of homoepitaxial films.
AB - Chemical state analysis by a combination of X-ray photoelectron spectroscopy (XPS) and X-ray absorption spectroscopy (XAS) using synchrotron radiation is performed for β-FeSi 2 single crystals and homoepitaxial β-FeSi 2 films. The Si 2p XPS and Fe L-edge XAS spectra imply that the annealing at 1173 K to remove native oxide layers on the crystal induces the formation of FeSi in the surface. The formation of FeSi is also confirmed by Si K-edge XAS analysis. For the homoepitaxial β-FeSi 2 films grown on the crystals, the Si K-edge XAS spectra indicate that structurally homogeneous β-FeSi 2 films can be grown on the β-FeSi 2 single crystals when the substrate temperatures of 973 and 1073 K are applied for molecular beam epitaxy (MBE). Consequently, it is indicated that the combination of XPS and XAS using synchrotron radiation is a useful tool to clarify chemical states of β-FeSi 2 single crystals and homoepitaxial β-FeSi 2 films, which is important to reveal optimized growth conditions of homoepitaxial films.
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U2 - 10.1016/j.apsusc.2010.10.097
DO - 10.1016/j.apsusc.2010.10.097
M3 - Article
AN - SCOPUS:79251600853
VL - 257
SP - 2950
EP - 2954
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
IS - 7
ER -