Spin accumulation in n-Ge on Si with sputtered Mn5Ge 3C0.8-contacts

Inga A. Fischer, Li Te Chang, Christoph Sürgers, Stefano Chiussi, Kang L. Wang, Jörg Schulze

研究成果: Conference contribution

摘要

We demonstrate electrical injection of spin-polarized electrons from sputtered Mn5Ge3C0.8 contacts into degenerately doped n-Ge layers on Si as an important step towards integrating spin injection into Ge channels into a CMOS-compatible fabrication process.

原文English
主出版物標題2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
發行者IEEE Computer Society
頁面113-114
頁數2
ISBN(列印)9781479954285
DOIs
出版狀態Published - 2014
事件7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 - Singapore, Singapore
持續時間: 2014 六月 22014 六月 4

出版系列

名字2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014

Conference

Conference7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
國家/地區Singapore
城市Singapore
期間14-06-0214-06-04

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程

指紋

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