TY - JOUR
T1 - Spin relaxation in a GaAs quantum dot embedded inside a suspended phonon cavity
AU - Liao, Y. Y.
AU - Chen, Y. N.
AU - Chuu, D. S.
AU - Brandes, T.
PY - 2006
Y1 - 2006
N2 - The phonon-induced spin relaxation in a two-dimensional quantum dot embedded inside a semiconductor slab is investigated theoretically. An enhanced relaxation rate is found due to the phonon van Hove singularities. Oppositely, a vanishing deformation potential may also result in a suppression of the spin relaxation rate. For larger quantum dots, the interplay between the spin orbit interaction and Zeeman levels causes the suppression of the relaxation at several points. Furthermore, a crossover from confined to bulklike systems is obtained by varying the width of the slab.
AB - The phonon-induced spin relaxation in a two-dimensional quantum dot embedded inside a semiconductor slab is investigated theoretically. An enhanced relaxation rate is found due to the phonon van Hove singularities. Oppositely, a vanishing deformation potential may also result in a suppression of the spin relaxation rate. For larger quantum dots, the interplay between the spin orbit interaction and Zeeman levels causes the suppression of the relaxation at several points. Furthermore, a crossover from confined to bulklike systems is obtained by varying the width of the slab.
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U2 - 10.1103/PhysRevB.73.085310
DO - 10.1103/PhysRevB.73.085310
M3 - Article
AN - SCOPUS:33244469939
SN - 1098-0121
VL - 73
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 8
M1 - 085310
ER -