Spin-to-Charge Conversion Manipulated by Fine-Tuning the Fermi Level of Topological Insulator (Bi1- xSb x)2Te3

Shu Hsuan Su, Pei Yu Chuang, Jung Chuan Lee, Cheong Wei Chong, Ya Wen Li, Zong Mou Lin, Yi Chun Chen, Cheng Maw Cheng, Jung Chun Andrew Huang

研究成果: Article同行評審

12 引文 斯高帕斯(Scopus)

摘要

The efficiency of spin-to-charge conversion is a key parameter in determining the performance of emerging spintronic devices. In the topological surface state of a topological insulator (TI), the spin-momentum locking effect offers a great possibility for efficient spin-to-charge conversion. Here, we report the relation between the Fermi level position EF and spin-to-charge conversion efficiency in heterostructure Ni80Fe20 (Py)/(Bi1-xSbx)2Te3. The band structure of (Bi1-xSbx)2Te3 films becomes tailored by tuning the ratio of bismuth to antimony so that the position of the Fermi level EF varies from the top side of the valence band to the bottom side of the conduction band through the in-gap surface Dirac cone. The result is consistent with the electronic behavior of the majority carriers varying from n-type to p-type. In spin-pumping measurements, we observed that the inverse Edelstein effect length (λIEE) with a tuned EF near the Dirac point is significantly enhanced, indicating that the spin-charge conversion is determined mainly by the topological surface state. These results demonstrate that fine-tuning of EF in a TI-based heterostructure is critical to maximizing the efficiency of spin-to-charge conversion using a spin-momentum locking mechanism.

原文English
頁(從 - 到)2988-2994
頁數7
期刊ACS Applied Electronic Materials
3
發行號7
DOIs
出版狀態Published - 2021 7月 27

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 材料化學
  • 電化學

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