TY - JOUR
T1 - Sputter etching effect of the substrate on the microstructure of β-FeSi2 thin film prepared by ion beam sputter deposition method
AU - Sasase, M.
AU - Shimura, K.
AU - Yamaguchi, K.
AU - Yamamoto, H.
AU - Shamoto, S.
AU - Hojou, K.
N1 - Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2007/4
Y1 - 2007/4
N2 - Beta iron disilicide (β-FeSi2) is one of the candidate materials for a compound semiconductor, which is promising for optoelectronic devices. β-FeSi2 film has been obtained by ion beam sputter deposition (IBSD) on Si(1 0 0) substrates that are pre-treated by sputter etching by Ne+. In the present study, the sputter etching effect on the substrate was investigated through the cross-sectional observation of transmission electron microscopy (TEM) in order to find the conditions for fabricating uniform β-FeSi2 films which have high orientation and form a smooth interface with the substrate. Nanostructural changes of the deposited film and the interface were observed as a function of sputter Ne+ energy and fluence. It was found from the observed crystal structure of the films and interface that the effect of the surface pre-treatment significantly changes with the ion energy and fluence. By 1 keV irradiation at the fluence of 3 × 1016 ions/cm2, β-FeSi2 film was epitaxially grown on Si(1 0 0) substrate with an atomically smooth interface.
AB - Beta iron disilicide (β-FeSi2) is one of the candidate materials for a compound semiconductor, which is promising for optoelectronic devices. β-FeSi2 film has been obtained by ion beam sputter deposition (IBSD) on Si(1 0 0) substrates that are pre-treated by sputter etching by Ne+. In the present study, the sputter etching effect on the substrate was investigated through the cross-sectional observation of transmission electron microscopy (TEM) in order to find the conditions for fabricating uniform β-FeSi2 films which have high orientation and form a smooth interface with the substrate. Nanostructural changes of the deposited film and the interface were observed as a function of sputter Ne+ energy and fluence. It was found from the observed crystal structure of the films and interface that the effect of the surface pre-treatment significantly changes with the ion energy and fluence. By 1 keV irradiation at the fluence of 3 × 1016 ions/cm2, β-FeSi2 film was epitaxially grown on Si(1 0 0) substrate with an atomically smooth interface.
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U2 - 10.1016/j.nimb.2007.01.041
DO - 10.1016/j.nimb.2007.01.041
M3 - Article
AN - SCOPUS:33947700262
SN - 0168-583X
VL - 257
SP - 186
EP - 189
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
IS - 1-2 SPEC. ISS.
ER -