SSKIP: Lifetime aware page skipping for multi-level cell flash-based solid-state drives

Jian Geng Li, Guan Yu Chen, Hsung Pin Chang, Da Wei Chang

研究成果: Conference contribution

摘要

NAND flash memory-based solid-state drives (SSDs) have been increasingly used in storage systems. Compared to single-level cell (SLC) NAND, which stores 1 bit per cell, multi-level cell (MLC) NAND stores 2 or more bits per cell, enabling higher-capacity and lower-cost SSDs. However, MLC NAND has inferior write performance compared to SLC NAND. A method to improve the write performance is to exploit the performance variability in MLC flash memory by skipping the slow pages (i.e., data writes always served by fast pages). However, excessive page skips cause the free space of the SSD to be consumed quickly, harmful to the SSD performance and lifetime. In this paper, a selective page skip mothed called SSKIP is proposed to improve the MLC write performance while maintaining the target SSD lifetime. According to the performance results, SSKIP can improve the performance by up to 56% by performing page skips. Moreover, it prevents violating the target lifetime warranty due to excessive page skips.

原文English
主出版物標題ICEIC 2019 - International Conference on Electronics, Information, and Communication
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9788995004449
DOIs
出版狀態Published - 2019 五月 3
事件18th International Conference on Electronics, Information, and Communication, ICEIC 2019 - Auckland, New Zealand
持續時間: 2019 一月 222019 一月 25

出版系列

名字ICEIC 2019 - International Conference on Electronics, Information, and Communication

Conference

Conference18th International Conference on Electronics, Information, and Communication, ICEIC 2019
國家New Zealand
城市Auckland
期間19-01-2219-01-25

指紋

Flash-based SSDs
Flash memory

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

引用此文

Li, J. G., Chen, G. Y., Chang, H. P., & Chang, D. W. (2019). SSKIP: Lifetime aware page skipping for multi-level cell flash-based solid-state drives. 於 ICEIC 2019 - International Conference on Electronics, Information, and Communication [8706493] (ICEIC 2019 - International Conference on Electronics, Information, and Communication). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/ELINFOCOM.2019.8706493
Li, Jian Geng ; Chen, Guan Yu ; Chang, Hsung Pin ; Chang, Da Wei. / SSKIP : Lifetime aware page skipping for multi-level cell flash-based solid-state drives. ICEIC 2019 - International Conference on Electronics, Information, and Communication. Institute of Electrical and Electronics Engineers Inc., 2019. (ICEIC 2019 - International Conference on Electronics, Information, and Communication).
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abstract = "NAND flash memory-based solid-state drives (SSDs) have been increasingly used in storage systems. Compared to single-level cell (SLC) NAND, which stores 1 bit per cell, multi-level cell (MLC) NAND stores 2 or more bits per cell, enabling higher-capacity and lower-cost SSDs. However, MLC NAND has inferior write performance compared to SLC NAND. A method to improve the write performance is to exploit the performance variability in MLC flash memory by skipping the slow pages (i.e., data writes always served by fast pages). However, excessive page skips cause the free space of the SSD to be consumed quickly, harmful to the SSD performance and lifetime. In this paper, a selective page skip mothed called SSKIP is proposed to improve the MLC write performance while maintaining the target SSD lifetime. According to the performance results, SSKIP can improve the performance by up to 56{\%} by performing page skips. Moreover, it prevents violating the target lifetime warranty due to excessive page skips.",
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Li, JG, Chen, GY, Chang, HP & Chang, DW 2019, SSKIP: Lifetime aware page skipping for multi-level cell flash-based solid-state drives. 於 ICEIC 2019 - International Conference on Electronics, Information, and Communication., 8706493, ICEIC 2019 - International Conference on Electronics, Information, and Communication, Institute of Electrical and Electronics Engineers Inc., 18th International Conference on Electronics, Information, and Communication, ICEIC 2019, Auckland, New Zealand, 19-01-22. https://doi.org/10.23919/ELINFOCOM.2019.8706493

SSKIP : Lifetime aware page skipping for multi-level cell flash-based solid-state drives. / Li, Jian Geng; Chen, Guan Yu; Chang, Hsung Pin; Chang, Da Wei.

ICEIC 2019 - International Conference on Electronics, Information, and Communication. Institute of Electrical and Electronics Engineers Inc., 2019. 8706493 (ICEIC 2019 - International Conference on Electronics, Information, and Communication).

研究成果: Conference contribution

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AU - Chang, Da Wei

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N2 - NAND flash memory-based solid-state drives (SSDs) have been increasingly used in storage systems. Compared to single-level cell (SLC) NAND, which stores 1 bit per cell, multi-level cell (MLC) NAND stores 2 or more bits per cell, enabling higher-capacity and lower-cost SSDs. However, MLC NAND has inferior write performance compared to SLC NAND. A method to improve the write performance is to exploit the performance variability in MLC flash memory by skipping the slow pages (i.e., data writes always served by fast pages). However, excessive page skips cause the free space of the SSD to be consumed quickly, harmful to the SSD performance and lifetime. In this paper, a selective page skip mothed called SSKIP is proposed to improve the MLC write performance while maintaining the target SSD lifetime. According to the performance results, SSKIP can improve the performance by up to 56% by performing page skips. Moreover, it prevents violating the target lifetime warranty due to excessive page skips.

AB - NAND flash memory-based solid-state drives (SSDs) have been increasingly used in storage systems. Compared to single-level cell (SLC) NAND, which stores 1 bit per cell, multi-level cell (MLC) NAND stores 2 or more bits per cell, enabling higher-capacity and lower-cost SSDs. However, MLC NAND has inferior write performance compared to SLC NAND. A method to improve the write performance is to exploit the performance variability in MLC flash memory by skipping the slow pages (i.e., data writes always served by fast pages). However, excessive page skips cause the free space of the SSD to be consumed quickly, harmful to the SSD performance and lifetime. In this paper, a selective page skip mothed called SSKIP is proposed to improve the MLC write performance while maintaining the target SSD lifetime. According to the performance results, SSKIP can improve the performance by up to 56% by performing page skips. Moreover, it prevents violating the target lifetime warranty due to excessive page skips.

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Li JG, Chen GY, Chang HP, Chang DW. SSKIP: Lifetime aware page skipping for multi-level cell flash-based solid-state drives. 於 ICEIC 2019 - International Conference on Electronics, Information, and Communication. Institute of Electrical and Electronics Engineers Inc. 2019. 8706493. (ICEIC 2019 - International Conference on Electronics, Information, and Communication). https://doi.org/10.23919/ELINFOCOM.2019.8706493