TY - JOUR
T1 - Stability-Enhanced Resistive Random-Access Memory via Stacked InxGa1- xO by the RF Sputtering Method
AU - Huang, Wei Lun
AU - Lin, Yong Zhe
AU - Chang, Sheng Po
AU - Lai, Wei Chih
AU - Chang, Shoou Jinn
N1 - Funding Information:
The authors would like to thank the Ministry of Science and Technology, Taiwan, for financially supporting this research under contract no. MOST 109-2221-E-006-203-MY3. The authors gratefully acknowledge the use of JEOL JEM-2100F CS STEM equipment belonging to the Instrument Center of National Cheng Kung University.
Publisher Copyright:
© 2021 The Authors. Published by American Chemical Society.
PY - 2021/4/27
Y1 - 2021/4/27
N2 - The stability of a resistive random-access memory (RRAM) device over long-term use has been widely acknowledged as a pertinent concern. For investigating the stability of RRAM devices, a stacked InxGa1-xO structure is designed as its switching layer in this study. Each stacked structure in the switching layer, formed via sputtering, consists of varying contents of gallium, which is a suppressor of oxygen vacancies; thus, the oxygen vacancies are well controlled in each layer. When a stacked structure with layers of different contents is formed, the original gradients of concentration of oxygen vacancies and mobility influence the set and reset processes. With the stacked structure, an average set voltage of 0.76 V, an average reset voltage of -0.66 V, a coefficient of variation of set voltage of 0.34, and a coefficient of variation of reset voltage of 0.18 are obtained. Additionally, under DC sweeps, the stacked RRAM demonstrates a high operating life of more than 4000 cycles. In conclusion, the performance and stability of the RRAM are enhanced herein by adjusting the concentration of oxygen vacancies via different compositions of elements.
AB - The stability of a resistive random-access memory (RRAM) device over long-term use has been widely acknowledged as a pertinent concern. For investigating the stability of RRAM devices, a stacked InxGa1-xO structure is designed as its switching layer in this study. Each stacked structure in the switching layer, formed via sputtering, consists of varying contents of gallium, which is a suppressor of oxygen vacancies; thus, the oxygen vacancies are well controlled in each layer. When a stacked structure with layers of different contents is formed, the original gradients of concentration of oxygen vacancies and mobility influence the set and reset processes. With the stacked structure, an average set voltage of 0.76 V, an average reset voltage of -0.66 V, a coefficient of variation of set voltage of 0.34, and a coefficient of variation of reset voltage of 0.18 are obtained. Additionally, under DC sweeps, the stacked RRAM demonstrates a high operating life of more than 4000 cycles. In conclusion, the performance and stability of the RRAM are enhanced herein by adjusting the concentration of oxygen vacancies via different compositions of elements.
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U2 - 10.1021/acsomega.1c00112
DO - 10.1021/acsomega.1c00112
M3 - Article
AN - SCOPUS:85105739541
SN - 2470-1343
VL - 6
SP - 10691
EP - 10697
JO - ACS Omega
JF - ACS Omega
IS - 16
ER -