Stability of Indium Gallium Zinc Aluminum Oxide Thin-Film Transistors with Treatment Processes

Yung Hao Lin, Ching Ting Lee

研究成果: Article

8 引文 斯高帕斯(Scopus)

摘要

The indium-gallium-zinc-aluminum-oxide (IGZAO) channel layer of the bottom-gate-type thin-film transistors (TFTs) was deposited on indium tin oxide-coated glass substrates using a magnetron radio frequency co-sputtering system with dual targets of indium gallium zinc oxide and Al. The 3 s orbital of Al cations provided an extra transport pathway and widened the bottom of the conduction band, thus increasing the electron mobility in the IGZAO films. The Al-O bonds could sustain the stability of oxygen of the IGZAO films. The IGZAO TFTs were processed by O2 plasma and post-annealing treatments. Hysteresis analysis was carried out in order to study the stability of the resulting IGZAO TFTs, the positive bias temperature stress (PBTS) performance, and the hot carrier effect were also measured. For the IGZAO TFTs, the threshold voltage shift of the PBTS performance and the hot carrier effect were 0.1 V and 0.06 V, respectively. Overall, the IGZAO TFTs exhibited good stability in this study.

原文English
頁(從 - 到)936-940
頁數5
期刊Journal of Electronic Materials
46
發行號2
DOIs
出版狀態Published - 2017 二月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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