Stable Pt/Ge/Au ohmic contact to n-GaAs with a Ta-Si-N barrier

J. S. Chen, E. Kolawa, R. P. Ruiz, M. A. Nicolet

研究成果: Conference contribution

2 引文 斯高帕斯(Scopus)


A Pt/Ge/Au contact of the structure: 〈n- GaAs〉/Pt(17 nm)/Ge(25 nm)/Au(43 nm), overlaid with a Ta-Si-N barrier layer and a Au metallization layer has a contact resistivity, ρc, of 3.7×10-6 Ωcm2 after annealing at 450 °C for 15 min. After aging at 450 °C for 60 h, ρc slightly degrades to 5.5×10-6 Ωcm2 while the surface keeps smooth. When alloyed at 550 °C for 15 min, ρc is 1.8×10-6 Ωcm2 and stays about the same value after annealing at 550 °C for 1 h. Without the Ta-Si-N barrier and the Au overlayer, the Pt/Ge/Au contact alone is also ohmic after annealing at 450 °C for 15 min but with a ρc of approximately 10-5 Ωcm2 while the surface morphology deteriorates significantly after aging at 450 °C for 20 h. The thermal reactions of this Pt/Ge/Au contact on GaAs, with or without a Ta-Si-N barrier layer, are investigated by backscattering spectrometry, x-ray diffraction, and transmission electron microscopy in conjunction with energy dispersive analyses of x-rays. For all samples, the main reaction products after annealing at 450 °C for 15 min are Au7Ga2 and PtGe:As, a PtGe phase that also contains arsenic. The product phases are randomly distributed within a laterally uniform reacted layer when the Pt/Ge/Au contact is covered by a Ta-Si-N layer. Without the Ta-Si-N barrier layer, a small arsenic loss and a Ga-rich phase (probably Ga-oxides) on the contact surface are observed after annealing at 450 °C. In this case, the surface and contact-semiconductor interface are more faceted than with a Ta-Si-N barrier layer.

主出版物標題III-V Electronic and Photonic Device Fabrication and Performance
發行者Publ by Materials Research Society
ISBN(列印)1558991964, 9781558991965
出版狀態Published - 1993
事件Materials Research Society Spring Meeting - San Francisco, CA, USA
持續時間: 1993 4月 121993 4月 15


名字Materials Research Society Symposium Proceedings


OtherMaterials Research Society Spring Meeting
城市San Francisco, CA, USA

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)
  • 凝聚態物理學
  • 材料力學
  • 機械工業


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