Stacked Triple Ultraviolet-Band Metal-Semiconductor-Metal Photodetectors

研究成果: Article

1 引文 斯高帕斯(Scopus)

摘要

To extend the sensing wavelength band, triple ultraviolet-band metal-semiconductor-metal ultraviolet photodetectors (MSM-UVPDs) were fabricated and studied in this study. Using a radio frequency magnetron sputtering system, the ZnO films, TiO2 films, and AlN films were sequentially stacked on quartz substrates. The cutoff wavelengths of the ZnO-based, TiO2-based, and AlN-based MSM-UVPDs were 370, 310, and 220 nm, respectively. The associated photoresponsivity of 47, 142, and 83 mA/W and the associated specific detectivity of 2.02 × 1010, 9.15 × 1010, and 2.20 × 1011 cm·Hz1/2 · W-1 were obtained, respectively. By probing the common pad and each UV pad, the performance of the UVA, UVB, and UVC wavelength band could be measured, respectively. The performance of dual-band could be obtained by probing the common pad and the two connected UV pads. Moreover, by probing the common mode and the three connected UV pads in the stacked MSM-UVPDs, the performance of triple ultraviolet bands could be obtained. Because the photoresponsivity in the visible wavelength band was very low, the triple-band MSM-UVPDs can work as solar blind UVPDs. The dominant noise was the flicker noise.

原文English
文章編號8531693
頁(從 - 到)15-18
頁數4
期刊IEEE Photonics Technology Letters
31
發行號1
DOIs
出版狀態Published - 2019 一月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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