Statistical variation of NMOSFET hot-carrier lifetime and its impact on digital circuit reliability

Jone F. Chen; Bruce W. McGaughy; Chenming Hu

Statistical variation of NMOSFET hot-carrier lifetime and its impact on digital circuit reliability

Jone F. Chen, Bruce W. McGaughy, Chenming Hu

微電子工程研究所

研究成果: Conference article › 同行評審

3 引文斯高帕斯（Scopus）

摘要

The statistical variation of NMOSFET hot-carrier lifetime is studied. The variation in lifetime among spatially separate dies is more significant than the variation within each die. Due to the statistical nature of device hot-carrier lifetime, hot-carrier induced circuit delay degradation in critical paths is a statistical distribution rather than a deterministic parameter. A statistical hot-carrier simulator has been developed to predict the impact that statistical variation of device hot-carrier lifetime has on circuit reliability.

原文	English
頁（從 - 到）	29-32
頁數	4
期刊	Technical Digest - International Electron Devices Meeting
出版狀態	Published - 1995
事件	Proceedings of the 1995 International Electron Devices Meeting, IEDM'95 - Washington, DC, USA 持續時間: 1995 12月 10 → 1995 12月 13

All Science Journal Classification (ASJC) codes

電子、光磁材料
凝聚態物理學
電氣與電子工程
材料化學

其它文件與鏈接

Link to publication in Scopus

引用此

@article{f360c73680ed42daa954fa3bdaef7e71,

title = "Statistical variation of NMOSFET hot-carrier lifetime and its impact on digital circuit reliability",

abstract = "The statistical variation of NMOSFET hot-carrier lifetime is studied. The variation in lifetime among spatially separate dies is more significant than the variation within each die. Due to the statistical nature of device hot-carrier lifetime, hot-carrier induced circuit delay degradation in critical paths is a statistical distribution rather than a deterministic parameter. A statistical hot-carrier simulator has been developed to predict the impact that statistical variation of device hot-carrier lifetime has on circuit reliability.",

author = "Chen, {Jone F.} and McGaughy, {Bruce W.} and Chenming Hu",

year = "1995",

language = "English",

pages = "29--32",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1995 International Electron Devices Meeting, IEDM'95 ; Conference date: 10-12-1995 Through 13-12-1995",

}

TY - JOUR

T1 - Statistical variation of NMOSFET hot-carrier lifetime and its impact on digital circuit reliability

AU - Chen, Jone F.

AU - McGaughy, Bruce W.

AU - Hu, Chenming

PY - 1995

Y1 - 1995

N2 - The statistical variation of NMOSFET hot-carrier lifetime is studied. The variation in lifetime among spatially separate dies is more significant than the variation within each die. Due to the statistical nature of device hot-carrier lifetime, hot-carrier induced circuit delay degradation in critical paths is a statistical distribution rather than a deterministic parameter. A statistical hot-carrier simulator has been developed to predict the impact that statistical variation of device hot-carrier lifetime has on circuit reliability.

AB - The statistical variation of NMOSFET hot-carrier lifetime is studied. The variation in lifetime among spatially separate dies is more significant than the variation within each die. Due to the statistical nature of device hot-carrier lifetime, hot-carrier induced circuit delay degradation in critical paths is a statistical distribution rather than a deterministic parameter. A statistical hot-carrier simulator has been developed to predict the impact that statistical variation of device hot-carrier lifetime has on circuit reliability.

UR - http://www.scopus.com/inward/record.url?scp=0029513596&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029513596&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0029513596

SN - 0163-1918

SP - 29

EP - 32

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - Proceedings of the 1995 International Electron Devices Meeting, IEDM'95

Y2 - 10 December 1995 through 13 December 1995

ER -

Statistical variation of NMOSFET hot-carrier lifetime and its impact on digital circuit reliability

摘要

All Science Journal Classification (ASJC) codes

其它文件與鏈接

指紋

引用此