Steady-state versus rapid thermal annealing of phosphorus-implanted pseudomorphic Si(100)/Ge0.12Si0.88

D. Y.C. Lie, J. H. Song, N. D. Theodore, F. Eisen, M. A. Nicolet, T. K. Carns, K. L. Wang, H. Kinoshita, Tzu Hsin Huang, D. L. Kwong

研究成果: Conference article同行評審

2 引文 斯高帕斯(Scopus)


Pseudomorphic Ge0.12Si0.88 films 265 nm thick grown by molecular beam epitaxy on p- Si(100) substrates were implanted with 100 keV 31P at room temperature for a dose of 5 × 1013/cm2. The projected range of the implanted P is about half the epilayer thickness. The implanted layers, together with non-implanted virgin samples, were subsequently annealed by both rapid thermal annealing in nitrogen and by steady-state furnace annealing in vacuum. The damage and strain of the annealed layers were studied by 4He channeling and x-ray double-crystal diffraction. For a dose of 5 × 1013 P /cm2, both the damage and strain introduced by implantation can be completely removed, within instrumental sensitivity, by rapid thermal annealing at 700 °C for 10 - 40 s. Furnace annealing at 550 °C for 30 min for this sample removes most of the damage and strain induced by implantation. Furnace annealing at 700 °C or higher worsens the crystallinity of the layer and the strain relaxes. Hall measurements were performed on the same samples. Furnace annealing cannot achieve good dopant activation without introducing significant strain relaxation to the heterostructure, while rapid thermal annealing can.

頁(從 - 到)51-56
期刊Materials Research Society Symposium - Proceedings
出版狀態Published - 1994
事件Proceedings of the 1994 Spring Meeting of the Materials Research Society - San Francisco, CA, USA
持續時間: 1994 四月 41994 四月 7

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

指紋 深入研究「Steady-state versus rapid thermal annealing of phosphorus-implanted pseudomorphic Si(100)/Ge<sub>0.12</sub>Si<sub>0.88</sub>」主題。共同形成了獨特的指紋。