Strain in coherent Ge quantum islands on si measured by transmission electron microscopy

Chuan Pu Liu; Peter D. Miller; William L. Henstrom; J. Murray Gibson

doi:10.1557/proc-571-49

Strain in coherent Ge quantum islands on si measured by transmission electron microscopy

Chuan Pu Liu, Peter D. Miller, William L. Henstrom, J. Murray Gibson

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

摘要

We describe a quantitative method for measuring the strain in small islands, and show results for coherent Ge islands on Si. The method uses dark field images from backside thinned samples in the transmission electron microscope. We show that no independent strain models are needed in the measurement, which employs an excellent "abrupt displacement" approximation. Results show that the strain in Ge domes is higher than in pyramids as expected.

原文	English
頁（從 - 到）	49-54
頁數	6
期刊	Materials Research Society Symposium - Proceedings
卷	571
DOIs	https://doi.org/10.1557/proc-571-49
出版狀態	Published - 1999

All Science Journal Classification (ASJC) codes

一般材料科學
凝聚態物理學
材料力學
機械工業

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10.1557/proc-571-49

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AU - Miller, Peter D.

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AU - Gibson, J. Murray

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N2 - We describe a quantitative method for measuring the strain in small islands, and show results for coherent Ge islands on Si. The method uses dark field images from backside thinned samples in the transmission electron microscope. We show that no independent strain models are needed in the measurement, which employs an excellent "abrupt displacement" approximation. Results show that the strain in Ge domes is higher than in pyramids as expected.

AB - We describe a quantitative method for measuring the strain in small islands, and show results for coherent Ge islands on Si. The method uses dark field images from backside thinned samples in the transmission electron microscope. We show that no independent strain models are needed in the measurement, which employs an excellent "abrupt displacement" approximation. Results show that the strain in Ge domes is higher than in pyramids as expected.

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Strain in coherent Ge quantum islands on si measured by transmission electron microscopy

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