Strain in coherent Ge quantum islands on si measured by transmission electron microscopy

Chuan Pu Liu, Peter D. Miller, William L. Henstrom, J. Murray Gibson

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

We describe a quantitative method for measuring the strain in small islands, and show results for coherent Ge islands on Si. The method uses dark field images from backside thinned samples in the transmission electron microscope. We show that no independent strain models are needed in the measurement, which employs an excellent "abrupt displacement" approximation. Results show that the strain in Ge domes is higher than in pyramids as expected.

原文English
頁(從 - 到)49-54
頁數6
期刊Materials Research Society Symposium - Proceedings
571
DOIs
出版狀態Published - 1999

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)
  • 凝聚態物理學
  • 材料力學
  • 機械工業

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