Strong surface Fermi level pinning and surface state density in GaAs0.65 Sb0.35 surface intrinsic- n+ structure

K. I. Lin, H. C. Lin, J. T. Tsai, C. S. Cheng, Y. T. Lu, J. S. Hwang, P. C. Chiu, S. H. Chen, J. I. Chyi, T. S. Wang

研究成果: Article

2 引文 斯高帕斯(Scopus)

摘要

Room-temperature photoreflectance is employed to investigate the Fermi level pinning and surface state density of a GaAs0.65 Sb0.35 surface intrinsic- n+ (SIN+) structure. Based on the thermionic emission theory and current-transport theory, the surface Fermi level VF and surface state density are determined experimentally from the dependence of the surface barrier height on the pump beam intensity. The surface state density D s is estimated as approximately 1.91× 1013 cm-2, and the Fermi level is located 0.63 eV below the conduction band edge at the surface. By sequential etching of the intrinsic layer, the Fermi level pinning in GaAs0.65 Sb0.35 SIN+ structure is further demonstrated.

原文English
文章編號141914
期刊Applied Physics Letters
95
發行號14
DOIs
出版狀態Published - 2009 十月 19

    指紋

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

引用此

Lin, K. I., Lin, H. C., Tsai, J. T., Cheng, C. S., Lu, Y. T., Hwang, J. S., Chiu, P. C., Chen, S. H., Chyi, J. I., & Wang, T. S. (2009). Strong surface Fermi level pinning and surface state density in GaAs0.65 Sb0.35 surface intrinsic- n+ structure. Applied Physics Letters, 95(14), [141914]. https://doi.org/10.1063/1.3246603